IPB160N04S2-03 INFINEON | Alldatasheet

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Technical content

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low Rds(on)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 160 A T C=100 °C2) 160 Pulsed drain current2) I D,pulse T C=25 °C 640 Avalanche energy, single pulse E AS I D=80A 810 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 40 V R DS(on),max 2.9 mΩ I D 160 A Product Summary Type Package Ordering Code Marking IPB160N04S2-03 PG-TO263-7-3 SP0002-18151 P2N0403 PG-TO263-7-3 Rev. 1.0 page 1 2006-03-02

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 2.1 3.0 4 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=40 V, V GS=0 V, T j=125 °C2) - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=60 A, SMD version - 2.4 2.9 mΩ Values Rev. 1.0 page 2 2006-03-02

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 5300 - pF Output capacitance C oss - 2150 - Reverse transfer capacitance Crss - 580 - Turn-on delay time t d(on) -2 7- n s Rise time t r -4 5- Turn-off delay time t d(off) -5 2- Fall time t f -3 2- Gate Charge Characteristics2) Gate to source charge Q gs -2 7 3 0 n C Gate to drain charge Q gd -4 6 7 5 Gate charge total Q g - 123 170 Gate plateau voltage V plateau - 5.2 - V Reverse Diode Diode continuous forward current I S - - 160 A Diode pulse current I S,pulse - - 640 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.84 1.3 V 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 235A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=160 A, R G=2.2 Ω V DD=32 V, I D=160 A, V GS=0 to 10 V Rev. 1.0 page 3 2006-03-02

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 0.001 0.01 0.1 0000001 t p [s] Z thJC [K/W] 120 160 200 240 280 320 0 50 100 150 200 T C [°C] P tot [W] 100 120 140 160 0 50 100 150 200 T C [°C] I D [A] Rev. 1.0 page 4 2006-03-02

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5.5V 7.0V 6.0V 10.0V 0 2 04 06 08 0 1 0 0 I D [A] R DS(on) [mΩ ] 25°C 175°C 120 160 200 240 280 320 234567 V GS [V] I D [A] 100 150 200 250 300 0 80 160 240 320 I D [A] g fs [S] 5.0V 5.5V 6.0V 7.0V 6.5V 10.0V 100 150 200 250 300 0123 V DS [V] I D [A] Rev. 1.0 page 5 2006-03-02

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Typ. Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 250µA 1000µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 100 1000 10000 0 5 10 15 20 25 30 V DS [V] C [pF] 25 °C 175 °C 100 1000 0.0 0.5 1.0 1.5 V SD [V] I F [A] Rev. 1.0 page 6 2006-03-02

13 Typ. avalanche energy 14 Typ. gate charge E AS=f(TJ) V GS=f(Q gate); I D=160A pulsed parameter: I D=80A, V DD=25V parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 8V 32V 0 2 04 06 08 0 1 0 0 1 2 0 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 100 200 300 400 500 600 700 800 900 25 75 125 175 T J [°C] E AV [mJ] Rev. 1.0 page 7 2006-03-02

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  • Pb-free lead plating; RoHS compliant Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-02