SMU15N05 TEMIC | Alldatasheet
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N-Channel Enhancement-Mode Transistors 175°C Maximum Junction Temperature Product Summary in @) [0 To ts TO-251 D rote ~—, — Lo Lo | oot [ o ll Drain connected to Tab ops ‘Top View 8 Order Number: SMDISNOS Obs Top View N-Channel MOSFET Order Number: SMU1SNOS Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) a a A ee cc A : _ n pe alls [Rian Coren eammarenineryR |e | | EF Power Disipation Fe» Spe. ) ee og ~ 1/88 [Lead Temperature (The"tromeatefor0see) Zz Thermal Resistance Ratings [= | «| re ee nT Notes: & Calculated Rating for Te = 25°C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and ‘Iypical Characteristics). b. Surface mounted on PC board. €. ‘Free air, vertical mount.
Specifications (Ty = 25°C Unless Otherwise Noted) [Parameter | Srmbot [Test Conan [tin | ty | ax [ vat | [DisiSourceDrekown otage | Vanpss | vos ovin=2500a | so || [Guerin verg | Vos | _Vos=Vosio=aioea | 0 | 40 | [GaeBosytenage id toss Voss OWVossemv ||| a A | ; [se ouveoy fssouwvewonncon | ne | —aaranerean-are [pay “ [OrSiieDainGumen® [toon vosnsvvosstov TTA | : [vesstoviparsa | oor [oo | Drinsseeovsaeneinet | te [Wan inersatienee [a [0 | [Rea Tamcencans | mm [i voseSWip=75A «| | a’ [|S | [ [so] | Vos OW Vos = 25vitetmne — [[30]| ae | [TearGueGiane || Ls y=] [GueDainchare= as | a | [ts] | Ips 35AVory=10VRo=25a [Ta [| ; [= [a | Se ee ee [savnes_[ [a] a [Feats we CCCs ST [Fevarivone™ iT Ces Aosmov TP TY [RecaeReoen Tine |_| a a a ae Notes: a. For design aid only; not subject to production testing. 'b. Pulse test; pulse width < 300 ps, duty cycle = 2%. ¢. Independent of operating temperature, 6-84 P-36850—Rey. C (06/0694)
Typical Characteristics (25°C Unless Otherwise Noted) © Output Characteristics x0 ‘Transfer Characteristics ee CT pe a a oe oe re a a 10 canoe es ey | eS ee A oe | [ TT | ° 7, SCONE 02 «68 w Vos — Drain-to-Source Voltage (V) Vos ~ Gate-to-Source Voltage (V) 1s ‘Transconductance _ 025 On-Resistance vs. Drain Current F A an i g ° on i oas on vatmy TT PA) tLe ce) A ee fi 4 Fw | YttTT TI LEELELT I o 5S 0 8% 2 2 30 o 0 202 © © 8 oF £413 Vos ~ Gate-to-Source Voltage (V) Ip ~ Drain Current (A) Ec ae
1000 Capacitance s GateCharge 2g
LT Te |g [ae | UA] ie . 800 $ 2 Y/ eT [I | ft i | Y aN ee © 1 [| ee s ay, i FL t fT 0 10 20 30 40 50 0 5 10 1s 20 2s ps — Drain-to-Source Voltage (V) Q, -— Total Gate Charge (nC)
Typical Characteristics (25°C Unless Otherwise Noted) BD On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage é 17S 2 4 —-—_ + ie 7 ae ~ ' eS 8 = a 2 Oe B ass a Cf oso 1 -50 -10 w 70 110 150 175 0 1 2 3 4 5 ‘Ty — Junction Temperature (°C) ‘Vsp — Source-to-Drain Voltage (V) Thermal Ratings® pa) Drain Current vs. Case’ ‘Temperature 100 reece ese Operating Area — a TT ETN © e a etter F oor (LOTT ETCH} 0 2s 50 5 100 125° «180 175 Ol 1 10 100 ‘Te ~ Case Temperature (°C) Vps — Drain-to-Source Voltage (V)
2 Normalized Thermal Transient Impedance, Junction-to-Case
: [TUNE TTIE TTTEETTET) f Duty Cycle = 0.5 i SSS SS a be OO eer
8 GES Se eee
So. Cec lll | | et PEPE SEE HHS wash ae | ET om CLLUTI CETTE TIT! 1} 10-+ 103 10-2 10-7 1 10 50 ‘a. Surface Mounted on PC Board. Square Wave Pulse Duration (sec)