SMS120 DSK | Alldatasheet
Document overview
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Technical content
D2=D1 Đ Ē 0.20 0.5± 0.1 0.5± 0.1 4.9± 0.2 2.6± 0.15
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RWS V Maximum DC blocking voltage V DC V Maximum average forw ord rectified current at c T L (SEE FIG.1) (NOTE 2) I (AV) A Peak forw ard surge current 8.3ms single half- c sine-w ave superimposed on rated load(JEDEC c Method) I FSM A Maximum instantaneous forw ard voltage at v 1.0A(NOTE.1) V F V Maximum DC reverse current @T A =25 o C at rated DC blocking voltage(NOTE1) @T A =100 o C R θ JA R θ JL Operating junction and storagetemperature range T STG o C Storage temperature range T J o C 0.5 I R NOTE: 1.Pulse test:300 μS pulse width,1%duty cy cle SMS120---SMS1A0 )copper pad areas REVERSE VOLTAGE: 20 --- 100 V CURRENT: 1.0 A ◇ Built-in strain relief ◇ Case:JEDEC DO-213AB,molded plastic over 1111pass ivated chip ◇ Low power loss,high effciency ◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
Typical thermal resitance (NOTE2) K ◇ High temperature soldering guaranteed:250 o C/10 1 11 seconds at terminals SMS120 SMS130 SMS140 SMS160 SMS190 SMS1A0 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.0046 ounces, 0.116 gram mA UNITS 20 30 40 60 90 100 DO - 213AB ◇ Low profile package ◇ For surface mounted applications 14 21 28 42 63 70 20 30 40 60 90 100 ◇ Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 ◇ High current capability,low forward voltage drop 1.0 ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection -55--- +150 -55--- +150 0.5 0.7 0.79 5.0 ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability Dimensions in millimeters BARRIER RECTIFIERS SURFACE MOUNT SCHOTTKY Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 10080604020 100 T J =25 T J =100 1 1 0 100 8.3ms Single Half Sine-Wave 0.01 1.0 SMS120 SMS160 SMS190 0 2 5 50 75 Single Phase Half Wave 60H Z Resistive or Inductive Load 1.0 100 125 150 1 75 AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,％ LEAD TEMPERATURE ℃ SMS120---SMS1A0 FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT -SMS1A0 -SMS140 0.1 www.diode.kr Diode Semiconductor Korea