SMP900G-JP SEME-LAB | Alldatasheet

Document overview

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Technical content

Ø 15.25 Ø 14.0 Ø 0.45 LEAD 10.16 20 nom. 5.5 SMP900G-JP MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE

DESCRIPTION

The SMP900G-JP is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". The cathode of the photodiode is electrically connected to the package. The large photodiode active area provides greater sensitivity than the SMP690 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. TO8 Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

  • HIGH SENSITIVITY
  • EXCELLENT LINEARITY
  • LOW NOISE
  • WIDE SPECTRAL RESPONSE
  • INTEGRAL OPTICAL FILTER OPTION note 1
  • TO8 HERMETIC METAL CAN PACKAGE
  • EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options Pin 1 – Anode Pin 2 – Cathode & Case

Characteristic Test Conditions. Min. Typ. Max. Units Responsively Active Area Dark Current Breakdown Voltage Capacitance Rise Time NEP λ at 900nm E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50Ω 900nm 0.45 0.55 9 16 16 38 60 80 800 200 28x10 -14 A/W mm 2 nA V pF ns W/√Hz CHARA CTERISTICS (Tamb =25°C unlessotherwise stated) D irectional C haracteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 A n gle from sen sor to illu m in ation Normalised incident power Directional characteristics 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 Normalised incident power 10° 20° 30° 40° 50° 60° 70° 80° Angle from sensor to illumination Spectral R esponse 100 0 200 400 600 800 1000 1200 W avelength (nm ) Relative Responsivity (%)