SMP550G-X2 SEME-LAB | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Dimensions in inches. P.I.N. PHOTODIODE
FEATURES
- WATER CLEAR PLASTIC
- WIDE SPECTRAL RESPONSE
- 0.1” (2.54mm) LEAD SPACING
- LOW DARK CURRENT
- SUITABLE FOR REMOTE CONTROL
- HIGH SENSITIVITY
DESCRIPTION
The SMP550G-X2 is a silicon PIN photodiode which is incorporated in a colourless plastic package. The terminals are solder tabs with 0.1” (2.54mm) spacing. Due to its design the diode can be assembled vertically on PC board. Arrays can be realised by multiple arrangements. This versatile photo detector can be used as a diode as well as a voltage cell. The PIN photodiode is outstanding for low junction capacitance , high cut off frequency and short switching time. It is particularly suitable for IR sound transmission and remote control. Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse Breakdown Voltage -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 0.080 0.105 0.095 0.105 0.015 0.018 0.500 Min. 0.015 0.018 0.170 0.210 0.175 0.205 0.125 0.165 Active Area
Characteristic Test Conditions. Min. Typ. Max. Units Responsively Active Area Dark Current Breakdown Voltage Capacitance Rise Time NEP λ at 900nm E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50Ω 900nm 0.45 0.55 5.19 0.25 2 1 5 60 80 30 55 5 10 9.8 A/W mm nA V pF ns W/√Hz CHARA CTERISTICS (Tamb =25°C unlessotherwise stated) Spectral Response 100 0 200 400 600 800 1000 1200 W avelength (nm ) Relative Responsivity (%)