SMP525G-EJ SEME-LAB | Alldatasheet
Document overview
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Technical content
Ø 0.45 LEAD 20 3.8 ± 0.2 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 WINDOW Ø 5.9 ± 0.1 5.08 ± 0.2 SMP525G-EJ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE
DESCRIPTION
The SMP525G-EJ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". The can structure permits a wide range of optical filter options. The cathode of the photodiode is electrically connected to the package. The photodiode active area provides asymmetric viewing angles in two orthogonal directions. The photodiode structure has been optimised for high sensitivity, asymmetric light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
- ASYMMETRIC RECEIVING ANGLES
- EXCELLENT LINEARITY
- LOW NOISE
- WIDE SPECTRAL RESPONSE
- LOW LEAKAGE CURRENT
- LOW CAPACITANCE
- INTEGRAL OPTICAL FILTER OPTION note 1
- TO39 HERMETIC METAL CAN PACKAGE
- EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options Pin 1 – Anode Pin 2 – Cathode & Case
Characteristic Test Conditions. Min. Typ. Max. Units Responsively Active Area Dark Current Breakdown Voltage Capacitance Rise Time NEP λ at 900nm E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50Ω 900nm 0.45 0.55 2.05 0.25 4 4 10 60 80 A/W mm nA V pF ns W/√Hz CHARA CTERISTICS (Tamb =25°C unlessotherwise stated) Spectral R esponse 100 0 200 400 600 800 1000 1200 W avelength (nm ) Relative Responsivity (%)
D irectional C haracteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 A n gle from sen sor to illu m in ation Directional characteristics 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 Normalised incident power 10° 20° 30° 40° 50° 60° 70° 80° Angle from sensor to illumination Normalised Incident Power Directional characteristics 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 Normalised incident power 10° 20° 30° 40° 50° 60° 70° 80° Angle from sensor to illumination D irectional C haracteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 A n gle from sen sor to illu m in ation Normalised Incident Power