SMP400G-BA SEME-LAB | Alldatasheet

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Technical content

Ø 5.4 Ø 4.7 3.613 nom. Cathode and case Anode Ø 0.45 Lead 2.54 SMP400G-BA MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE

DESCRIPTION

The SMP400G-BA is a Silicon P.I.N. photodiode incorporated in a compact, low profile, hermetic metal can package. The electrical terminations are via two leads of diameter 0.005" on a pitch of 0.1". The cathode of the photodiode is electrically connected to the package. The photodiode structure has been optimised for high sensitivity, high speed light measurement applications. The wide viewing angle provides relatively even reception over a large area. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

  • EXCELLENT LINEARITY
  • LOW NOISE
  • WIDE SPECTRAL RESPONSE
  • WIDE INTRINSIC BANDWIDTH
  • WIDE VIEWING ANGLE
  • LOW LEAKAGE CURRENT
  • LOW CAPACITANCE
  • INTEGRAL OPTICAL FILTER OPTION note 1
  • TO18 HERMETIC METAL CAN PACKAGE
  • EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options Pin 1 – Anode Pin 2 – Cathode & Case

Characteristic Test Conditions. Min. Typ. Max. Units Responsively Active Area Dark Current Breakdown Voltage Capacitance Rise Time NEP λ at 900nm E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50Ω 900nm 0.45 0.55 0.62 0.1 1.0 0.5 2.5 60 80 8 12 1.5 2.5 7.2 A/W mm 2 nA V pF ns W/√Hz CHARA CTERISTICS (Tamb =25°C unlessotherwise stated) D irectional C haracteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 A ngle from sensor to illum ination Directional characteristics 10° 20° 30° 40° 50° 60° 70° 80° Angle from sensor to illumination 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0.2 0.4 0.6 0.8 Spectral R esponse 100 0 200 400 600 800 1000 1200 W avelength (nm ) Relative Responsivity (%) Normalised Incident Power