SMP1255PUTG SMC | Alldatasheet

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Technical content

Technical Data Green Products Data Sheet N1749 Rev.-

  • China - Germany - Korea - Singapore - United States •
  • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1255PUTG

Description

The SMP1255P integrates 3 channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC61000-4-2 standard. An additional 12V TVS diode is included to provide lightning surge protection for the USB VBUS pin up to 100A (tP=8/20μs) per the IEC61000-4-5 standard. The SMP1255P provides superior protection for current intensive applications such as fast charging peripharals. The SMP1255P comes in a space saving 2.0x1.8mm μDFN package with a typical height of 0.55mm making it an ideal solution for smart phones, tablets, and other portable electronics. Features Functional Block Diagram For USB Voltage Bus Pin (VBUS)

  • IEC 61000-4-2 (ESD) ±30k V (air), ±30kV (contact)
  • IEC 61000-4-5 (lightning) 100A (8/20 μs)
  • IEC 61000-4-4 (EFT) 80A (5/50ns)
  • Protection for V BUS operating up to 12V
  • Benchmark setting protection
  • High current handling capability for fast charging

applications

For USB Data Pin (D+, D-, ID)

  • IEC 61000-4-2 (ESD) ±15k V (air), ±12kV (contact)
  • IEC 61000-4-5 (lightning) 4A (8/20 μs)
  • IEC 61000-4-4 (EFT) 40A (5/50ns)
  • 0.5pF capacitance
  • Low clamping voltage and dynamic resistance (0.3 Ω) Applications Pinout
  • USB 2.0
  • USB OTG
  • μUSB
  • Protection for the VBUS circuit on USB2.0 Fast Charging

Technical Data Green Products Data Sheet N1749 Rev.-

  • China - Germany - Korea - Singapore - United States •
  • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1255PUTG Ordering Information: Device Package Packaging Options P0/P1 Packaging Speciications Min. Order Qty. SMP1255PUTG μDFN-6 Tape & Reel - 8mm tape/7” reel 2mm/4mm EIA RS-481 3000 Absolute Maximum Ratings: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics: (TOP=25°C) Characteristics Symbol Condition Min. Typ. Max. Units USB VBUS (Pin 1) Reverse Stand-Off Voltage V RWM Pin 1 to GND - - 12 V Reverse Breakdown Voltage VBR I T=1mA, Pin 1 to GND 13 13.5 16.5 V Reverse Leakage Current I LEAK VR=12V, Pin 1 to GND - - 0.1 μA Forward Voltage V F IF=10mA, GND to Pin 1 0.6 0.7 1.0 V Clamping Voltage1 V C IPP = 30A, tp=8/20μs, Fwd - 16.5 18 V IPP = 100A, tp=8/20μs, Fwd - 19.5 25 V ESD With stand Voltage1 V ESD IEC61000-4-2 (Contact) ±30 - - kV IEC61000-4-2 (Air) ±30 - - kV Diode Capacitance1 C D Reverse Bias=0V, f=1 MHz - 1300 2500 pF USB D+, D-, ID (Pin 2, 3, 4) Reverse Stand-Off Voltage V RWM Pin 2, 3 and 4 to GND - - 4 V Reverse Breakdown Voltage VBR I T=2μA, Pin 2, 3 and 4 to GND 4.5 6.0 7.5 V Reverse Leakage Current I LEAK VR=2V, Pin 2, 3 and 4 to GND - - 0.02 μA VR=4V, Pin 2, 3 and 4 to GND - - 0.1 Clamping Voltage1 V C IPP = 1A, tp=8/20μs, Fwd - 6.6 8.0 V IPP = 2A, tp=8/20μs, Fwd - 7.0 8.5 V Dynamic Resistance R DYN TLP, tp=100ns, Pin 2, 3 and 4 to GND2 - 0.3 - Ω ESD With stand Voltage1 V ESD IEC61000-4-2 (Contact) ±12 - - kV IEC61000-4-2 (Air) ±15 - - kV Diode Capacitance1 C I/O-GND Reverse Bias=0V, f=1 MHz - 0.5 0.6 pF Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) Test Setting: tP=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to t2=90ns Parameter Symbol Value Unit Peak Current (tp=8/20μs) IPP (Pin1) 100 A Peak Current (tp=8/20μs) IPP (Pin2-4) 4 A Operating Temperature T OP -40 to + 125 °C Storage Temperature TSTOR -55 to + 150 °C

Technical Data Green Products Data Sheet N1749 Rev.-

  • China - Germany - Korea - Singapore - United States •
  • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1255PUTG Marking Diagram: Part Name Information Where ○A G3 is SMP1255PUTQ ○A = Product Series SMP1255P G3 = Assembly Site SMP 1255P U T G G= Green T= Tape & Reel Package U =μDFN-6 TVS Diode Arrays Capacitance vs. Reverse Bias (Pin1 to GND) Capacitance vs. Reverse Bias (Pin2, 3, 4 to GND) Clamping Voltage vs. Peak Pulse Current (Pin1 to GND) Clamping Voltage vs. Peak Pulse Current (Pin2, 3, 4 to GND) Series ○A G3

Technical Data Green Products Data Sheet N1749 Rev.-

  • China - Germany - Korea - Singapore - United States •
  • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1255PUTG Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin1 to GND) Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin2, 3, 4 to GND) Positive Transmission Line Pulsing (TLP) Plot (Pin 2, 3, 4 to GND) Negative Transmission Line Pulsing (TLP) Plot (Pin 2, 3, 4 to GND)

Technical Data Green Products Data Sheet N1749 Rev.-

  • China - Germany - Korea - Singapore - United States •
  • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1255PUTG Mechanical Dimensions —μDFN-6(1.8×2.0×0.55mm) Embossed Carrier Tape & Reel Specification — μDFN-6 μDFN-6(1.8×2.0×0.55mm) JEDEC MO-229 Symbol Millimeters Inches Min Typ Max Min Typ Max A1 0.00 - 0.05 0.000 - 0.002 A3 0.15Ref 0.006Ref e 0.40 BSC 0.016 BSC e1 0.80 BSC 0.031 BSC B 0.80 BSC 0.031 BSC Symbol Millimeters A0 1.95+/-0.05 B0 2.30+/-0.05 D0 1.50+0.10 D1 Φ 0.60+0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.75+/-0.05 P0 2.00+/-0.05 P1 4.00+/-0.10 P2 4.00+/-0.10 T 0.25+/-0.02 W 8.00+0.30/-0.10 PIN 1 DOT BY MARKING Bottom View Recommended Soldering Footprint Top View Side View PIN #1 IDENTIFICATION CHAMFER 0.2

Technical Data Green Products Data Sheet N1749 Rev.-

  • China - Germany - Korea - Singapore - United States •
  • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP1255PUTG DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..