UF5404SG SMC | Alldatasheet
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Technical content
Technical Data Green Products Data Sheet N1669, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • UF5404SG UF5404SG ULTRAFAST PLASTIC RECTIFIER Applications:
- Switching Power Supply
- Power Switching Circuits
- General Purpose Features:
- Glass Passivated Die Construction
- Ideally Suited for Automatic Assembly
- Low Forward Voltage Drop, High Efficiency
- Low Power Loss
- Super Fast Recovery Time
- Plastic Case Material has UL Flammability Classification Rating 94V-O
- This is a Pb − Free Device
- All SMC parts are traceable to the wafer lot
- Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches DO-201AE DO-201AE Dim Min Max Min Max A 25.4 - 1.000 - B 8.50 9.50 0.335 0.374 C 0.96 1.26 0.038 0.050 D 5.00 5.60 0.197 0.220 All In mm In inch
Technical Data Green Products Data Sheet N1669, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • UF5404SG Marking Diagram: Where XXXXX is YYWWL UF = Device Type 54 = Forward Current (3A) 04 = Reverse Voltage (400V) SG = Configuration SSG = SSG YY = Year WW = Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping UF5404SG DO-201AE (Pb-Free) 3000pcs / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Repetitive Peak Inverse Voltage V RWM - 400 V Average Forward Current I F(AV) 50% duty cycle @TC =105℃ rectangular wave form 3.0 A One Cycle Non-Repetitive Surge Forward Current IFSM 8.3ms, Half Sine pulse 45 A
Technical Data Green Products Data Sheet N1669, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • UF5404SG Electrical Characteristics: Characteristics Symbol Condition Max. Units Forward Voltage Drop* VF @ IF=3A, Pulse, TJ = 25 °C 1.25 V Reverse Current* IR1 @VR = rated VR TJ = 25 °C 10 μA IR2 @VR = rated VR TJ = 100 °C 100 μA Reverse Recovery Time trr IF=0.5A, IR=1A,and IRR=0.25A 35 ns * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case Approximate Weight R θJC DC operation 8 °C/W wt - 1.02 g Case Style DO-201AE *1 Alumina Substrate Mounted (Soldering Lands=2×3.5mm, Both Sides)
Technical Data Green Products Data Sheet N1669, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • UF5404SG 100 Forward Voltage Drop-VFM(V) Instantaneous Forwar Current(A) 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 Percent of Peak R everse Vol tage. (%) Instantaneous Reverse Current.( μA) Fig.2-Typical Reverse Characteristics Fig.3-Typical Instantaneous Forward Voltage Characteristics Fig.1-Typical Junction Capacitance TJ=25℃ TJ=125℃ TJ=25℃ TJ=25℃ 100 0 5 10 15 20 25 30 35 40 Reverse Voltage.(V) Junction Capacitance.(PF) TJ=25℃
Technical Data Green Products Data Sheet N1669, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • UF5404SG DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..