SMP1000G-KP SEME-LAB | Alldatasheet

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Technical content

Dimensions in mm. P.I.N. PHOTODIODE

DESCRIPTION

The SMP1000G-KP is a large Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The photodiode is electrically isolated from the package, which has a separate earth lead. The larger photodiode active area provides greater sensitivity than the SMP900 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

  • HIGH SENSITIVITY
  • PHOTODIODE ISOLATED FROM PACKAGE
  • EXCELLENT LINEARITY
  • LOW NOISE
  • WIDE SPECTRAL RESPONSE
  • INTEGRAL OPTICAL FILTER OPTION note 1
  • TO8 HERMETIC METAL CAN PACKAGE
  • EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options Ø 15.25 Ø 14.0 Ø 0.45 LEAD 10.16 20 nom. 5.5 TO-8 Pin 1 – Anode Pin 2 – Cathode Pin 3 – Case

Characteristic Test Conditions. Min. Typ. Max. Units Responsively Active Area Dark Current Breakdown Voltage Capacitance Rise Time NEP λ at 900nm E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50Ω 900nm 0.45 0.55 76.85 8 9 16 38 60 80 800 735 150 28x10-14 0.45 A/W mm 2 nA V pF ns W/√Hz CHARA CTERISTICS (Tamb =25°C unlessotherwise stated) D irectional C haracteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 A ngle from sensor to illum ination Directional characteristics 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 Normalised incident power 10° 20° 30° 40° 50° 60° 70° 80° Angle from sensor to illumination Spectral R esponse 100 0 200 400 600 800 1000 1200 W avelength (nm ) Relative Responsivity (%) Normalised Incident Power