SMP1000G-JQ SEME-LAB | Alldatasheet

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Technical content

Ø 15.25 Ø 14.0 Ø 0.45 LEAD 10.16 20 nom. 5.5 SMP1000G-JQ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE

DESCRIPTION

The SMP1000G-JQ is a large Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The package window has greater ultra-violet light transmission, thus extending the useful spectral range of the device. The electrical terminations are via two leads of diameter 0.018" on pitch of 0.2". The cathode of the photodiode is electrically connected to the package. The larger photodiode active area provides greater sensitivity than the SMP900 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications across the infra-red to ultra- violet spectrum. Inclusion of a suitable optical filter into the package can produce a device that responds only to ultra- violet light. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. Standard TO-8 Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

  • HIGH SENSITIVITY
  • EXCELLENT LINEARITY
  • LOW NOISE
  • WIDEST SPECTRAL RESPONSE
  • ENHANCED UV SENSITIVITY
  • INTEGRAL OPTICAL FILTER OPTION note 1
  • TO8 HERMETIC METAL CAN PACKAGE
  • EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options Pin 1 – Anode Pin 2 – Cathode & Case

Characteristic Test Conditions. Min. Typ. Max. Units Responsively Active Area Dark Current Breakdown Voltage Capacitance Rise Time NEP λ at 900nm E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse E = 0 Dark 20V Reverse 30V Reverse 50Ω 900nm 0.45 0.55 76.85 8 9 16 38 60 80 800 735 150 28x10-14 0.45 A/W mm 2 nA V pF ns W/√Hz CHARA CTERISTICS (Tamb =25°C unlessotherwise stated) D irectional C haracteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 A ngle from sensor to illum ination Directional characteristics 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 Normalised incident power 10° 20° 30° 40° 50° 60° 70° 80° Angle from sensor to illumination Spectral R esponse 100 0 200 400 600 800 1000 1200 W avelength (nm ) Relative Responsivity (%) Normalised Incident Power