SMLBFY90 SEME-LAB | Alldatasheet
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SILICON PLANAR EPITAXIAL NPN TRANSISTOR Semelab Limited SMLBFY90
- LOW NOISE TRANSISTOR
- FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 7861 Issue 2 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk A subsidiary of TT electronics plc. SEMELAB VCBO Collector - Base Voltage VCER Collector - Emitter Voltage (RBE ≤ 50Ω) VCEO Collector - Emitter Voltage VEBO Emitter - Base Voltage IC(AV) Average Collector Current ICM Peak Collector Current (f ≥ 1MHz) Ptot Power Dissipation at TA = 25°C Tstg Storage Temperature Tj Junction Temperature 30V 30V 15V 2.5V 25mA 50mA 200mW 200°C -65 to +200°C ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) THERMAL PROPERTIES Parameters Min. Typ. Max. Unit RθJA Junction - ambient thermal resistance ≤ 880 °C/W RθJC Junction - case thermal resistance ≤ 580 °C/W * Pulse Test tp = 300μs, δ≤ 2% (1) Shield Lead (case) not connected (2) Shield Lead (case) grounded
SILICON PLANAR EPITAXIAL NPN TRANSISTOR Semelab Limited Document Number 7861 Issue 2 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. SMLBFY90 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameters Test Conditions Min. Typ. Max. Unit. ICBO Collector Cut Off Current VCB = 15V I E = 0 10 nA V(BR)CEO* Collector Emitter Breakdown Voltage IC = 10mA I B = 0 15 V V(BR)CER* Collector Emitter Breakdown Voltage IC = 10mA R BE ≤ 50Ω 30 h21E Static Forward Current Transfer Ratio VCE = 1V I C = 2mA 25 150 -VCE = 1V I C = 25mA 20 125 DYNAMIC CHARACTERISTICS Parameters Test Conditions Min. Typ. Max. Unit. fT Transition Frequency VCE = 5V I C = 2mA f = 100MHz 0.6 GHz VCE = 5V I C = 25mA f = 100MHz 1.0 C22b (1) Output Capacitance VCB = 10V I E = 0 f = 1MHz 1.5 pF C12e (2) Open Circuit Reverse Transfer Capacitance VCE = 5V I C = 0 f = 1MHz 0.8 pF IS21I2 Insertion Gain VCE = 10V I C = 14mA f = 200MHz 10.0 dB 0.48 (0.019) 0.41 (0.016) dia. 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. 2.54 (0.100) Nom. Mechanical Data Dimensions in mm (inches) TO72 (TO-206AF) Pin 1 - Emitter Pin 3 - Collector Pin 2 - Base Pin 4 - Connected to Case