SMLA42CSM SEME-LAB | Alldatasheet
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Prelim. 7/94Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current PD Total Device Dissipation Derate Above 25°C T j Maximum Junction Temperature Tstg Storage Temperature Range 300V 300V 500mA 350mW 2.0mW/°C 200°C –55 to 200°C MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.012) 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (0.055) max. A0.31 (0.012)rad. rad. A = SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
FEATURES
- HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGES LOW CAPACITANCE HERMETIC CERAMIC SURFACE MOUNT PACKAGE SOT23CSM (SOT23 COMPATIBLE) SOT23 CERAMIC (LCC1 PACKAGE) PAD 1 – Base Underside View PAD 2 – Collector PAD 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Prelim. 7/94Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit IC = 100/G6D AI E = 0 IC = 1mA I B = 0* IE = 100/G6D AI C = 0 VCB = 200V I E = 0 VEB = 6V I C = 0 IC = 20mA I B = 2mA IC = 20mA I B = 2mA IC = 1mA V CE = 10V* IC = 10mA V CE = 10V* IC = 30mA V CE = 10V* IC = 10mA V CE = 20V f = 20MHz VCB = 20V I E = 0 f = 1MHz ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Collector - Base breakdown voltage Collector - Emitter breakdown voltage Emitter - Base breakdown voltage Collector cut-off current Emitter cut-off current Collector - Emitter saturation voltage Base - Emitter saturation voltage DC Current gain Transition frequency Output capacitance 300 300 0.1 0.1 0.5 0.9 V V V /G6D A /G6D A V V MHz pF * Pulse test tp = 200/G6D s , /G64 = 2% V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT C ob