SML9030220M SEME-LAB | Alldatasheet
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SML9030–220M Prelim. 3/97Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VGS Gate – Source Voltage ID Continuous Drain Current (V GS = -10V , Tcase = 25°C) ID Continuous Drain Current (V GS = -10V , Tcase = 100°C) IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25°C Linear Derating Factor TJ Operating Junction Temperature TSTG Storage Temperature Range R /G71 JC Thermal Resistance Junction to Case R /G71 JA Thermal Resistance Junction to Ambient ±20V 13.2A 8.3A 53A 45W 0.36W/°C –55 to +150°C –55 to +150°C 2.8°C/W 80°C/W MECHANICAL DATA Dimensions in mm (inches) Dia. 2.65 2.75 0.89 1.14 0.70 0.90 4.70 5.0010.41 10.67 3.56 3.81 16.38 16.89 13.39 13.64 10.41 10.92 12.70 19.05 2.54 BSC 123 P–CHANNEL MOS TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
P CHANNEL REPETITIVE AVALANCHE RATED DYNAMIC dv/dt RATING FAST SWITCHING EASE OF PARALLELING SIMPLE DRIVE REQUIREMENTS VDSS –50V ID(cont) 13.2A R DS(on) 0.15/G57/G57/G57/G57 TO –220 – Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
Parameter Test Conditions Min. Typ. Max. Unit -50 -0.060 0.15 -2 -4 3.1 -100 -500 -100 100 900 570 140 170 13.2 -6.3 120 250 0.47 1.1 4.5 7.5 SML9030 –220M Prelim. 3/97Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VGS = 0 I D = -250/G6D A Reference to 25°C ID = -1mA VGS = -10V I D = 9.3A VDS = VGS ID = -250/G6D A VDS = -40V I D = 9.3A VDS = -60V V GS = 0 VDS = -48V V GS = 0 TJ = 125°C VGS = -20V VGS = 20V VGS = 0 VDS = -25V f = 1MHz I D = 13.2A VDS = -48V VGS = -10V VDD = -30V ID = 13.2A R G = 12/G57 R D = 1.5/G57 IS = -18A T J = 25°C VGS = 0 IF = -18A T J = 25°C di/ dt/G3D 100A//G6D s ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On Resistance Gate Threshold Voltage Forward Transconductance 1 Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge1 Gate – Drain (“Miller”) Charge1 Turn–On Delay Time 1 Rise Time 1 Turn–Off Delay Time 1 Fall Time 1 Continuous Source Current (Body Diode) Pulse Source Current 2 (Body Diode) Diode Forward Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge 1 V V/°C /G57 V S /G6D A nA pF nC nS A V ns /G6D C nH BV DSS /G44 BV DSS /G44 TJ R DS(on) VGS(th) gfs IDSS IGSS IGSS C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf IS ISM VSD trr Q rr LD LS STATIC ELECTRICAL RATINGS Notes 1) Pulse Test: Pulse Width /GA3 300ms, /G64/GA3 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (from 6mm down lead to centre of drain bond pad) Internal Source Inductance (from 6mm down lead to centre of source bond pad) PACKAGE CHARACTERISTICS