SML1001RHN SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Prelim. 7/98Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. SML Parameter 901RHN 1001RHN Unit Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit BV DSS IDSS IGSS ID(ON) VGS(TH) R DS(ON) VDSS ID IDM VGS PD TJ , TSTJ TL 123 17.65 (0.695) 17.39 (0.685) 4.19 (0.165) 3.94 (0.155) Dia. 13.84 (0.545) 13.58 (0.535) 17.96 (0.707) 17.70 (0.697) 19.05 (0.750) 12.70 (0.500) 1.65 (0.065) 1.39 (0.055) Typ. 5.08 (0.200) BSC 3.56 (0.140) BSC 21.21 (0.835) 20.70 (0.815) 1.14 (0.707) 0.88 (0.035) 6.86 (0.270) 6.09 (0.240) TO–258 Package Outline. Dimensions in mm (Inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation @ T case = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Tempeature (0.063” from Case for 10 Sec.) SML1001RHN SML901RHN 900 1000 ±30 250 –55 to +150°C 300 V A A V W W/°C Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current On State Drain Current 2 Gate Threshold Voltage Static Drain – Source On State Resistance 2 1000 900 250 1000 ±100 1.00 V /G6D A nA A V /G57 MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/GB5 S , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4TH GENERATION MOSFET D G S VGS = 0V ID = 250/G6D A VDS = VDSS VDS = 0.8VDSS TC = 125°C VGS = ±30V V DS = 0V VDS > ID(ON) x RDS(ON) Max VGS = 10V VDS = VGS ID = 1.0mA VGS = 10V , ID = 0.5 ID [Cont.] Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
Prelim. 7/98Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions. Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic / Test Conditions. Part Number Min. Typ. Max. Unit 1.3 320 636 1200 2.2 4.5 9 IS ISM VSD trr Q rr Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge V GS = 0V IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A//G6D s A A V ns µC Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit 250 250 SOA1 SOA2 I LM VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec Safe Operating Area Safe Operating Area Inductive Current Clamped W A Characteristic / Test Conditions. Min. Typ. Max. Unit 0.50 R /G71 JC Junction to Case Junction to Ambient °C/W °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS SAFE OPERATING AREA CHARACTERISTICS THERMAL CHARACTERISTICS (Tcase =25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/GB5 S , Duty Cycle < 2% 3) See MIL–STD –750 Method 3471 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz VGS = 10V ID = ID [Cont.] VDD = 0.5 VDSS VDD = 0.5 VDSS ID = ID [Cont.] VGS = 15V R G = 1.8/G57 pF nC ns 2460 2950 360 500 105 160 90 130 9.3 14 47 70 15 30 16 32 64 95 24 48