SML1001R1AN SEME-LAB | Alldatasheet
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. SML Parameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit LAB SEME Prelim. 12/00 BVDSS IDSS IGSS ID(ON) VGS(TH) RDS(ON) VDSS ID IDM VGS PD TJ , TSTJ Dimensions in mm (Inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation @ T case = 25°C Derate above 25°C Operating and Storage Junction Temperature Range SML1001R1AN / SML1001R3AN SML901R1AN / SML901R3AN GS = ±30V , VDS = 0V) SML1001R1AN / SML901R1AN SML1001R1AN / SML901R3AN SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 900 1000 900 1000 9.5 8.5 38 34 ±30 230 –55 to 150 V A A V W Drain – Source Breakdown Voltage GS = 0V , ID = 250/G6D A) Zero Gate Voltage Drain Current Gate – Source Leakage Current On State Drain Current (VDS > ID(ON) x RDS(ON) Max , VGS = 10V) Gate Threshold Voltage Static Drain – Source On State Resistance (VGS =10V , ID = 0.5 ID [Cont.]) 1000 900 250 1000 ±100 9.5 8.5 1.1 1.3 V /G6D A nA A V /G57 MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated) SML1001R1AN 1000V 9.5A 1.10 /G57/G57/G57/G57 SML901R1AN 900V 9.5A 1.10 /G57/G57/G57/G57 SML1001R3AN 1000V 8.5A 1.30 /G57/G57/G57/G57 SML901R3AN 900V 8.5A 1.30 /G57/G57/G57/G57 (VGS = 0V , VDS = VDSS) (VGS = 0V , VDS = 0.8VDSS , TC = 125°C)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions. Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic / Test Conditions. Part Number Min. Typ. Max. Unit 9.5 8.5 1.3 320 636 1200 2.2 4.5 9 Prelim. 12/00 LAB SEME SML1001R1AN 1000V 9.5A 1.10 /G57/G57/G57/G57 SML901R1AN 900V 9.5A 1.10 /G57/G57/G57/G57 SML1001R3AN 1000V 8.5A 1.30 /G57/G57/G57/G57 SML901R3AN 900V 8.5A 1.30 /G57/G57/G57/G57 IS ISM VSD trr Qrr SML1001R1AN / SML901R1AN SML901R3AN / SML901R3AN SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage2 (VGS = 0V , IS = – ID [Cont.]) Reverse Recovery Time S = – ID [Cont.] , dls / dt = 100A//G6D s Reverse Recovery Charge A A V ns /G6D C Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit 230 230 SOA1 SOA2 I LM VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec Safe Operating Area Safe Operating Area Inductive Current Clamped W A Characteristic / Test Conditions. Min. Typ. Max. Unit 0.53 300 R/G71 JC R/G71 JA TL Junction to Case Junction to Ambient Max. Lead Temperature for Soldering Conditions: 0.065 ” from Case for 10 sec. °C/W °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS SAFE OPERATING AREA CHARACTERISTICS THERMAL CHARACTERISTICS (Tcase =25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz VGS = 10V ID = ID [Cont.] VDD = 0.5 VDSS VDD = 0.5 VDSS ID = ID [Cont.] VGS = 15V RG = 1.8/G57 pF nC ns 2460 2950 360 500 105 160 90 130 9.3 14 47 70 15 30 16 32 64 95 24 48 SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN