SML80B13F

SML80B13F SEME-LAB | Alldatasheet

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11/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS 1 32 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) Max. 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) BSC 2.87 (0.113) 3.12 (0.123) TO–247AD Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 800 ±30 ±40 280 2.24 –55 to 150 300 1210 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = mH, RG = 25/G57 , Peak IL = 13A VDSS 800V ID(cont) 13A R DS(on) 0.650/G57/G57/G57/G57 Pin 1 – Gate Pin 2 – Drain Pin 3 – Source  Faster Switching  Lower Leakage  100% Avalanche Tested  Popular TO–247 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G

11/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.6/G57 pF nC ns 3050 3700 300 420 140 225 150 225 17 25 70 105 12 24 11 22 60 90 12 24 Characteristic Test Conditions Min. Typ. Max. Unit BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250/G6D A VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 800 1000 ±100 0.65 V /G6D A nA V A /G57 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit 1.3 200 350 0.7 1.8 IS ISM VSD dv / dt trr Q rr Irrm (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS /GA3 ID [cont] dI / dt = 100A/µs VDD /GA3 VDSS VR = 200V TJ /GA3 150°CR G = 2.0/G57 IS = – ID [Cont.] T J = 25°C dI / dt = 100A//G6D sT J = 125°C IS = – ID [Cont.] T J = 25°C dl / dt = 100A//G6D sT J = 125°C IS = – ID [Cont.] T J = 25°C dl / dt = 100A//G6D sT J = 125°C Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Peak Recovery Current A V V/ns ns /G6D C A SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

11/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Min. Typ. Max. Unit 0.45 R /G71 JC R /G71 JA Junction to Case Junction to Ambient °C/W THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% 3) See MIL–STD –750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.