SML6609ASMD05 SEME-LAB | Alldatasheet

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Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourage s customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 1 of 3 SML6609ASMD05

  • Electrically Isolated and Hermetically Sealed Surface Mount Package
  • Ultra Low On State Resistance
  • Fast Switching
  • Low Gate Charge
  • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated) VDS Drain – Source Voltage -30V VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ T case = 25°C -6.3A IDM Pulsed Drain Current -40A PD Total Power Dissipation @ T case = 25°C 20W Linear De-rating Factor @ T case ≥ 25°C 0.45W/°C TJ, T stg Operating and Storage Temperature Range -55°C to +1 50°C THERMAL CHARACTERISTICS Symbol Parameters Max Units RθJC Thermal Resistance, Junction To Case 1.8 °C/W RθJPCB Thermal Resistance, Junction To PCB 6.25 °C/W Notes: 1) Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 2 of 3 ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise stated) Symbol Parameters Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage VGS = 0 I D = -250µA -30 V jT VDSSB ∆ Temperature Coefficient of Breakdown Voltage Reference to 25°C ID = -250µA -0.022 V/°C VGS = -10V I D = -7A 0.04 Tj = 125°C 0.54 RDS(on) Static Drain-Source On-State Resistance VGS = -7.5V I D = -5.5A 0.06 Ω VGS(th) Gate Threshold Voltage VDS = V GS I D = -250µA -2.5 -4.5 V jT thGSV ∆ ) ( Temperature Coefficient of Gate Threshold Voltage Reference to 25°C ID = -250 µ A -0.004 V/°C gfs Forward Transconductance VDS = -10V I D = -7A 14.5 S( Ʊ) IDSS Drain-Source Leakage Current VGS = 0 V DS = -24V -3.0 µ A IGSS Forward Gate-Source Leakage VGS = -20V -100 IGSS Reverse Gate-Source Leakage VGS = 20V 100 nA ID(on) On-State Drain Current VGS = -10V V DS = -5V -20 A DYNAMIC CHARACTERISTICS Ciss Input Capacitance 1975 Coss Output Capacitance 315 Crss Reverse Transfer Capacitance VGS = 0 VDS = -25V f = 1.0MHz 160 pF Qg Total Gate Charge 46 Qgs Gate-Source Charge 19 Qgd Gate-Drain Charge VGS = -10V ID = -7.2A VDS = -15V 11 nC td(on) Turn-On Delay Time 20 tr Rise Time 28 td(off) Turn-Off Delay Time 39 tf Fall Time VDD = -15V ID = -1.0A RG = 6Ω VGS = -10V ns SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Source Current -2.1 A VSD Diode Forward Voltage IS = -2.1A V GS = 0 -1.2 V

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 3 of 3 MECHANICAL DATA Dimensions in mm (inches) 1 3 2.41 (0.095) (0.030) min. 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) Max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26

16 PLCS

0.50(0.020) 0.127 (0.005) SMD05 (TO -276AA) (Underside View) Pad 1 - Source Pad 2 – Drain Pad 3 - Gate