SML50L47

SML50L47 SEME-LAB | Alldatasheet

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6/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 188 ±30 ±40 520 4.16 –55 to 150 300 2500 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 2.26mH, RG = 25/G57 , Peak IL = 47A VDSS 500V ID(cont) 44A R DS(on) 0.100/G57/G57/G57/G57  Faster Switching  Lower Leakage  100% Avalanche Tested  Popular TO–264 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) 2.29 (0.090) 2.69 (0.106) 19.81 (0.780) 21.39 (0.842) 19.51 (0.768) 26.49 (0.807) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 2.79 (0.110) 3.18 (0.125) 5.45 (0.215) BSC 2 plcs. 0.76 (0.030) 1.30 (0.051) 2.29 (0.090) 2.69 (0.106) 2.59 (0.102) 3.00 (0.118) 0.48 (0.019) 0.84 (0.033) 123 3.10 (0.122) 3.48 (0.137) TO –264AA Package Outline. Dimensions in mm (inches) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source

6/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 0.6/G57 pF nC ns 7400 8900 1000 1400 380 570 312 470 50 75 127 190 14 30 16 32 54 80 51 0 Characteristic Test Conditions Min. Typ. Max. Unit BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250/G6D A VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 2.5mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 500 250 1000 ±100 0.100 V /G6D A nA V A /G57 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit 188 1.3 250 500 1.6 5.5 IS ISM VSD dv / dt trr Q rr Irrm (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS /GA3 ID [cont] dI / dt = 100A/µs VDD /GA3 VDSS VR = 200V TJ /GA3 150°CR G = 2.0/G57 IS = – ID [Cont.] T J = 25°C dI / dt = 100A//G6D sT J = 125°C IS = – ID [Cont.] T J = 25°C dl / dt = 100A//G6D sT J = 125°C IS = – ID [Cont.] T J = 25°C dl / dt = 100A//G6D sT J = 125°C Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Peak Recovery Current A V V/ns ns /G6D C A SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

6/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Min. Typ. Max. Unit 0.24 R /G71 JC R /G71 JA Junction to Case Junction to Ambient °C/W THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% 3) See MIL–STD –750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.