SML50HB06 SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Collector-emitter Voltage Vce 600 V DC Collector Current Tc=80C Tc=25C Ic, nom Ic A Repetitive peak Collector Cur- rent tp=1msec,Tc=80C I crm 100 A Total PowerDissipation Tc=25C P tot 280 W Gate-emitter peak voltage Vges +/-20 V DC Forward Diode Current I f 50 A Repetitive Peak Forward Current tp=1msec I frm 100 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C t 450 A2sec Isolation test voltage RMS, 50Hz, t=1min V isol 2500 V Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties SML50HB06 Collector-emitter saturation voltage Ic=50A,Vge=15V, Tc=25C Ic=50A,Vge=15V,Tc=125C V ce(sat) 1.95 2.2 2.45 V Gate Threshold voltage Ic=50A,Vce=Vge, Tvj=25C Vge (th) 4.5 5.5 6.5 V Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 2.2 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.2 nF Collector emitter cut off current Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C I ces 1 500 µA Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C I ges 400 µA
Turn on delay time Ic=50A, Vcc=300V Vge=+/15V,Rg=2.7Ω,Tvj=25C Vge=+/-15V,Rg=2.7Ω,Tvj=125C td,on nsec nsec Rise time Ic=50A, Vcc=300V Vge=+/-15V,Rg=2.7Ω,Tvj=25C Vge=+/-15V,Rg=2.7Ω,Tvj=125C tr nsec nsec Turn off delay time Ic=50A, Vcc=300V Vge=+/-15V,Rg=2.7Ω,Tvj=25C Vge=+/-15V,Rg=2.7Ω,Tvj=125C t d,off 120 130 nsec nsec Fall time Ic=50A, Vcc=300V Vge=+/-15V,Rg=2.7Ω,Tvj=25C Vge=+/-15V,Rg=2.7Ω,Tvj=125C t f nsec nsec Turn energy loss per pulse Ic=50A,Vce=300V,Vge=15V Rge=2.7Ω,Tvj=125C,L=35nH E on 0.5 mJ Turn off energy loss per pulse Ic=50A,Vce=300V, Vge=15V Rge=Ω,Tvj=125C,L=35nH Eoff 1.0 mJ SC Data tp ≤10µsec, Vge≤15V Tvj≤125C,Vcc=300V,Vce(max)- Vces-Lσdi/dT Isc 225 A Stray Module inductance Lσce 40 nH Terminal-chip resistance Rc 1.2 m Ω Forward voltage Ic=50A,Vge=0V, Tc=25C Ic=50A,Vge=0V, Tc=125C Vf 1.25 1.2 1.6 V Peak reverse recovery current If=50A, -di/dt=2900A/µsec Vce=300V,Vge=-10V,Tvj=25C Vce=300V,Vge=-10V,Tvj=125C Irm A Recovered charge If=50A, -di/dt=2900A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Qr 3.4 5.6 µC Reverse recovery energy If=50A, -di/dt=2900A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C E rec 1.5 mJ mJ Diode characteristics
Thermal resistance junction to case Igbt Diode R θJ-C 0.67 1.1 K/W Thermal resistance case to heatsink R θC-hs 0.03 K/W Maximum junction temperature Tvj 150 C Maximum operating temperature Top -55 125 C Storage Temperature Tstg -55 125 C Thermal Properties Min Typ Max