SML50EUZ12B SEME-LAB | Alldatasheet
Document overview
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Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. SML50EUZ12B Enhanced Ultrafast Recovery Diode
1200 Volt, 50 Amp
The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques. BENEFITS l Very fast recovery for low switching losses l Ultra soft recovery with low EMI generation l High dynamic ruggedness under all conditions l Low temperature dependency l Low on-state losses with positive temperature coefficient l Stable blocking voltage and low leakage current l Avalanche rated for high reliability circuit operation
APPLICATIONS
l Freewheeling Diode for IGBTs and MOSFETs l Uninterruptible Power Supplies UPS l Switch Mode Power Supplies SMPS l Inverse and Clamping Diode l Snubber Diode l Fast Switching Rectification VRRM Peak Repetitive Reverse Voltage VR DC Reverse Blocking Voltage IFAV Average Forward Current @Tc = 85°C IFSM(surge) Repetitive Forward Current IFS(surge) Non-Repetitive Forward Current (10msec pulse) PD Power Dissipation @Tc = 85°C WAVL Avalanche Energy (L=40mH) Tj ,TSTG Operating & Storage Junction Temperature ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1200V 1200V 50A 125A 500A 155W 40mJ -55 to 150°C SEME LAB 1 2 Key Parameters See package outline for mechanical data and more details VR (max) 1200V VF (typ) 3.0V IF (max) 50A trr (max) 50ns 1- Cathode 2- Anode Cathode Back of Case 50EUZ12B SML
V mA pF A nsec A nsec nsec °C/W nH N.m Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. SML50EUZ12B F IR Leakage Current CT Junction Capacitance Qrr Reverse Recovery Charge Irr Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Irr Reverse Recovery Current trr Reverse Recovery Time trr Reverse Recovery Time IF = 50A Tj = 25°C IF = 50A Tj = 125°C IF = 25A Tj = 25°C VR = 1200V T j = 25°C VR = 1200V T j = 125°C VR = 200V T j = 25°C V =R 600V I F = 50A di /dt = 1000A/µs T j = 25°C V =R 600V I F = 50A di /dt = 1000A/µs T j = 125°C V =R 50V I F = 1A di /dt = 100A/µs T j = 25°C 3 3.5 3.7 2.25 1.5 1000 1 5 TBD 1.37 2.66 0.6 300 1.1 ELECTRICAL & MECHANICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS THERMAL AND MECHANICAL CHARACTERISTICS R Junction to Case Thermal Resistance R Junction to Ambient Thermal Resistance TL Lead Temperature LS Stray Inductance Torque Mounting Torque µA µC µC θjc θja Forward Voltage DropV Min. Typ. Max. Unit SEME LAB TBD 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) BSC 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) 2- Anode 1- Cathode Cathode 1 2 Dimensions in Millimeters and (Inches)