SML50B26 SEME-LAB | Alldatasheet
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6/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS 1 32 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) Max. 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) BSC 2.87 (0.113) 3.12 (0.123) TO–247AD Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 104 ±20 ±30 300 2.4 –55 to 150 300 1300 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 3.85mH, RG = 25/c87 , Peak IL = 26A VDSS 500V ID(cont) 26A R DS(on) 0.200/c87/c87/c87/c87 Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
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6/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 104 1.3 510 IS ISM VSD trr Q rr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A//c109 s IS = – ID [Cont.] , dls / dt = 100A//c109 s Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns /c109 C Characteristic Min. Typ. Max. Unit 0.42 R /c113 JC R /c113 JA Junction to Case Junction toAmbient °C/W SOURCE – DRAIN DIODE RA TINGS AND CHARA CTERISTICS THERMAL CHARA CTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/c109 S , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.6/c87 pF nC ns 3700 520 205 160 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Characteristic Test Conditions Min. Typ. Max. Unit BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250/c109 A VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current Drain – Source On State Resistance 2 500 250 ±100 2 4 0.20 V /c109 A nA V A /c87 STATIC ELECTRICAL RA TINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARA CTERISTICS