SML50A21_07 SEME-LAB | Alldatasheet

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TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 ±30 ±40 235 1.88 –55 to 150 300 1300 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A VDSS 500V ID(cont) 21A RDS(on) 0.220ΩΩ  Faster Switching  Lower Leakage  TO–3 Hermetic Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 3.84 (0.151) 4.09 (0.161) 1.47 (0.058) 1.60 (0.063) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) TO–3 Package Outline. Dimensions in mm (inches) Pin 1 – Gate Pin 2 – Source Case – Drain Document Number 5963 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Characteristic Test Conditions Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 1.3 510 IS ISM VSD trr Qrr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/μs IS = – ID [Cont.] , dls / dt = 100A/μs Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns μC Characteristic Min. Typ. Max. Unit 0.53 RθJC RθJA Junction to Case Junction to Ambient °C/W SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380μS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6Ω pF nC ns 3700 4440 510 715 200 300 150 225 25 37 70 105 12 25 10 20 50 75 81 5 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Characteristic Test Conditions Min. Typ. Max. Unit BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) VGS = 0V , ID = 250μA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current Drain – Source On State Resistance 2 500 250 ±100 0.220 V μA nA V A Ω STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARACTERISTICS Document Number 5963 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.