SML5020BN

SML5020BN SEME-LAB | Alldatasheet

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Prelim. 6/94Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) VDSS ID IDM VGS PD TJ , TSTG TL 1 32 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) Max. 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) BSC 2.87 (0.113) 3.12 (0.123) TO247–AD Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. V GS = 0V , ID = 250/G6D A VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 112 ±30 360 2.9 –55 to 150 300 V A A V W W/°C Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current Drain – Source On State Resistance 2 500 250 1000 ±100 0.20 V /G6D A nA V A /G57 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) VDSS 500V ID(cont) 28.0A RDS(on) 0.20/G57/G57/G57/G57 4TH GENERATION MOSFET Pin 1 – Gate Pin 2 – Drain Pin 3 – Source

Prelim. 6/94Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 112 1.3 215 430 860 37 1 4 IS ISM VSD trr Qrr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A//G6D s IS = – ID [Cont.] , dls / dt = 100A//G6D s Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns /G6D C Characteristic Test Conditions Min. Typ. Max. Unit 360 360 112 SOA1 SOA2 ILM Safe Operating Area Safe Operating Area Inductive Current Clamped W W A Characteristic Min. Typ. Max. Unit 0.34 R/G71 JC R/G71 JA Junction to Case Junction to Ambient °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS SAFE OPERATING AREA CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.8/G57 pF nC ns 2890 3500 590 830 230 350 140 210 18 27 75 110 19 38 43 86 85 125 56 112 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec.