SML40H22 SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400 ±30 ±40 200 1.6 –55 to 150 300 1210 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 5.00mH, RG = 25W , Peak IL = 22A VDSS 400V ID(cont) 22A R DS(on) 0.180WW
- Faster Switching
- Lower Leakage
- TO–258 Hermetic Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G 123 17.65 (0.695) 17.39 (0.685) 4.19 (0.165) 3.94 (0.155) Dia. 13.84 (0.545) 13.58 (0.535) 17.96 (0.707) 17.70 (0.697) 19.05 (0.750) 12.70 (0.500) 1.65 (0.065) 1.39 (0.055) Typ. 5.08 (0.200) BSC 3.56 (0.140) BSC 21.21 (0.835) 20.70 (0.815) 1.14 (0.707) 0.88 (0.035) 6.86 (0.270) 6.09 (0.240) TO–258 Package Outline. Dimensions in mm (inches) Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max . Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max . Unit 1.3 380 6.4 IS ISM VSD trr Q rr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms Continuous Source Current Pulsed Source Current Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns mC Characteristic Min. Typ. Max . Unit 0.62 R qJC R qJA Junction to Case Junction to Ambient °C/W SOURCE – DRAIN DIODE R ATINGS AND CHAR ACTERISTICS THERMAL CHAR ACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.6W pF nC ns 3350 4020 510 715 198 300 135 200 24 36 60 90 11 22 10 20 48 75 6 12 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Characteristic Test Conditions Min. Typ. Max . Unit BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250mA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current Drain – Source On State Resistance 2 400 250 ±100 0.180 V mA nA V A W STATIC ELECTRICAL R ATING S (Tcase = 25°C unless otherwise stated) DYNAMIC CHAR ACTERISTICS