SML400HB01MF SEME-LAB | Alldatasheet
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Technical content
Source-drain voltage VDSS Tj=25C to 175C Rgs=1MΩ VDSS 100 V DC Collector Current ID25 Tc=25C Tc=25C,Tvj=175C Ic, nom Ic 400 400 A Repetitive peak Drain Current tp=1msec,Tc=80C I crm 600 A Total Power Dissipation Tc=25C P tot 1700 W Gate-emitter peak voltage Continuous Transient VGS +/-20 =/-30 V V Repetitive Peak Forward Current tp=1msec I frm 600 A Isolation voltage RMS, 50Hz, t=1min V isol 2500 V Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -Mosfet module Maximum rated values/Electrical Properties SML400HB01MF Drain-source breakdown voltage ID=250µA,VGS=0V, Tc=25C BVDSS 100 V Gate Threshold voltage I D=8mA,VDS=VGS, Tvj=25C Vge (th) 3.0 5 V f=1MHz,Tvj=25C,Vgs=0V,V DS=0V 15200 5800 1720 pF pF pF 470 100 270 nC nC nC Gate-source leakage current V GS=+/-20V, VGS=0V,Tvj=25C IGSS 1 +/-200 nA Drain source leakage current V DS=VGS=20V, Tvj=25C Tvj=150C Tvj=175C I DSS µA mA mA Tvj=25C,V DS=0.5VDSS,ID=0.5ID25,VGS=10V MIN TYP MAX
Vgs=10V, I D=0.5ID25 S Ic=120A,V DS=0.5VDSS,VGS=10 V Rge=3.3Ω,L=30nH Tvj=25C 150 ns ns Ns ns Stray Module inductance Lσce 30 nH Terminal-chip resistance R c 1.0 m Ω DC Forward Diode Current Is T c=25C VGS=0V Is 400 A Peak reverse recovery current If=50A, -di/dt=100A/µsec VR=50V,Vgs=0V,Tvj=25C A Recovered charge If=50A, -di/dt=100A/µsec Vr=50V,Vgs=0V,Tvj=25C Qrm µC 0.8 Repetitive forward current Ism 800 A Reverse recovery time If=50A, -di/dt=100A/µsec Vr=50V,Vgs=0V,Tvj=25C trr 300 ns I F=IS, VGS=0V tP=300µsec, duty cycle=2% VSD 1.5 V Irm Source –Drain Diode characteristics TYP MAX
Thermal resistance junction to case Igbt Diode R θJ-C 0.09 0.11 K/W Thermal resistance case to heatsink R θC-hs 0.03 K/W Maximum junction temperature Tvj 175 C Maximum operating temperature Top -55 175 C Storage Temperature Tstg -55 175 C Thermal Properties Min Typ Max 400 300 200 100