SML300HB06

SML300HB06 SEME-LAB | Alldatasheet

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Technical content

Collector-emitter Voltage Vce 600 V DC Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom Ic 300 400 A Repetitive peak Collector Current tp=1msec,Tc=80C I crm 600 A Total Power Dissipation Tc=25C Ptot 1250 W Gate-emitter peak voltage Vges +/-20 V DC Forward Diode Current I f 300 A Repetitive Peak Forward Current tp=1msec I frm 600 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C Tvj=150C t 8400 7900 A 2sec Isolation voltage RMS, 50Hz, t=1min V isol 2500 V Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/ Electrical Properties SML300HB06 Collector-emitter saturation voltage Ic=300A,Vge=15V, Tc=25C Ic=300A,Vge=15V,Tc=125C Ic=300A,Vge=15V,Tc=150C V ce(sat) 1.45 1.6 1.7 1.9 V Gate Threshold voltage Ic=4.8mA,Vce=Vge, Tvj=25C Vge (th) 4.9 5.8 6.5 V Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 19 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.57 nF Collector emitter cut off current Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C I ces 1 5 mA mA Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C I ges 400 nA

Turn on delay time Ic=300A, Vcc=300V Vge=+/15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C td,on 110 120 130 nsec nsec nsec Rise time Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C tr nsec nsec nsec Turn off delay time Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C t d,off 490 520 530 nsec nsec nsec Fall time Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C t f nsec nsec nsec Turn on energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V Rge=2.4Ω,L=30nH Tvj=125C di/dt=6500A/µsec Tvj=150C E on 3.1 3.3 mJ mJ Turn off energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V Rge=2.4Ω,L=30nH Tvj=125C di/dt=6500A/µsec Tvj=150C E off 15.5 mJ mJ SC Data tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce (max)=Vces-Lσdi/dt Tvj=150C Isc 2100 1500 A A Stray Module inductance L σce 40 nH Terminal-chip resistance Rc 1.2 m Ω Forward voltage Ic=300A,Vge=0V, Tc=25C Ic=300A,Vge=0V, Tc=125C Ic=300A,Vge=0V, Tc=150C V f 1.55 1.5 1.45 1.95 V V V Peak reverse recovery current If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C I rm 190 235 250 A A A Recovered charge If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C Qr µC µC µC Reverse recovery energy If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C E rec 3.4 6.2 7.0 mJ mJ mJ Diode characteristics

Thermal resistance junction to case Igbt Diode R θJ-C 0.12 0.16 K/W Thermal resistance case to heatsink R θC-hs 0.03 K/W Maximum junction temperature Tvj 175 C Maximum operating temperature Top -55 175 C Storage Temperature Tstg -55 175 C Thermal Properties Min Typ Max