SML25SCM650N2B TTELEC | Alldatasheet
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SILICON SILICON SILICON SILICON CC CCARBIDE ARBIDE ARBIDE ARBIDE NN NN-- --CHANNEL CHANNEL CHANNEL CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications Semelab Limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be b oth accurate and reliable at the time of going to p ress. However Semelab assumes no responsibility for any errors or omissio ns discovered in its use. Semelab encourages custome rs to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4J B Document Number: Issue: Page: 10498 1 of 3 Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated) VDS Drain - Source Voltage 650V VGS Gate - Source Voltage -6 to +22V ID Continuous Drain Current (1) Tc = 25°C 25A IDM Pulsed Drain Current (2) 60A PD Total Power Dissipation at T J = 25°C 90W Derate Above 25°C 0.45W/°C TJ Maximum Junction Temperature 225°C Tstg Storage Temperature Range -55 to +225°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 2.2 °C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 10 us, δ ≤ 1% (3) Pulse Width ≤ 380us, δ ≤ 2% (4) Indicative by design, not a production test (5) Pulse Width ≤ 780us, δ ≤ 2%
SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE NN NN-- --CHANNEL CHANNEL CHANNEL CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET SML25SCM650N2B Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10498 2 of 3 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. U nits IGSS+ Forward Gate - Source Leakage VGS = +22V VDS = 0V 100 nA IGSS- Reverse Gate - Source Leakage VGS = -6V VDS = 0V -100 nA BV DSS Drain - Source Breakdown Voltage ID = 1.0mA V GS = 0V 650 V IDSS Zero Gate Voltage Drain Current VDS = 650V V GS = 0V 1.0 10 µA VGS(th) Gate Threshold Voltage ID = 3.3mA V DS = VGS 1.6 4.0 V RDS(on) Static Drain - Source On - State Resistance (3) VGS = 18V I D = 8A 120 148 mΩ T J = 125°C 150 gfs Forward Transconductance (5) VDS = 10V I DS = 8A 2.3 S(Ʊ) DYNAMIC CHARACTERISTICS Ciss Input Capacitance (4) VDS = 500V VGS = 0V f = 1.0MHz 1200 pF Coss Output Capacitance (4) 90 Crss Reverse Transfer Capacitance (4) 13 td(on) Turn-On Delay Time VDD = 300V ID = 10A VGS = +18V / -3V RL = 30Ω RG = 0Ω ns Tr Rise Time 34 td(off) Turn-Off Delay Time 60 tf Fall Time 42 Qg Total Gate Charge (4) VDD = 300V VGS = 18V ID = 10A RL = 30Ω 53 nC Qgs Gate-Source Charge (4) 14 Qgd Gate-Drain Charge (4) 16 SOURCE-DRAIN DIODE CHARACTERISTICS IF Continuous Source Current (4) TC = 25°C 25 A VSD Diode Forward Voltage (3) IS = 8A TJ = 25°C VGS = 0 5.0 V
SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE NN NN-- --CHANNEL CHANNEL CHANNEL CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET SML25SCM650N2B Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10498 3 of 3 MECHANICAL DATA Dimensions in mm (inches) Pad Finish Au SMD1 (TO -276AB ) (Underside View) Pad 1 - Gate Pad 2 - Drain Pad 3 - Source 1- Body Diode