SML2308CSM4

SML2308CSM4 SEME-LAB | Alldatasheet

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Technical content

VDS Drain – Source Voltage VGS Gate – Source Voltage ID Continuous Drain Current @T A = 25°C IDM Pulsed Drain Current 1 PD Power Dissipation @T A = 25°C @T A = 100°C R θJA Thermal Resistance Junction to Ambient TSTG , TJ Maximum Junction and Storage Temperature Range 60V ±20V 10A 0.8W 0.32W 156°C/W -55 to +150°C MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 (0.009)rad. 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) 1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 (0.009)min. 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) N–CHANNEL ENHANCEMENT MODE MOSFET LCC3 PACKAGE (MO-041BA) Underside View ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate The SML2308CSM4 is a very low on state resistance N-Channel enhancement mode mosfet in a Ceramic Surface Mount pack- age designed for high rel applications:

FEATURES

BVDSS =60V  ID = 2A  RDS(ON) = 0.16Ω  Hermetic Surface Mount Package  Screening Option Available Document Number 5331 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Characteristic Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS(TH) IGSS IDSS ID(ON) R DS(ON) gfs VSD Q g Q gs Q gd C iss C oss C rss td(on) tr td(off) tf 1.5 ±100 0.5 0.15 0.2 0.20 0.25 4.6 0.77 1.2 4.8 10 0.8 1.0 240 71 5 10 20 17 35 61 5 Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Source Leakage Current Zero Gate Voltage Drain Current On State Drain Current Drain Source On-State Resistance 1 Forward Transconductance 1 Diode Forward Voltage1 Total Gate Charge Gate-Source Charge Gate-Drain Charge Input capacitance Output capacitance Reverse transfer capacitance Turn–on Delay Time Rise Time Turn–off Delay Time Fall Time VGS = 0V I D = 250µA VDS = VGS ID = 250µA VGS = ±20V V GS = 0V VDS = 60V V GS = 0V TJ = 55°C VDS = ≥4.5V V GS = 10V VDS = ≥4.5V V GS = 4.5V VGS = 10V I D = 2.0A VGS = 4.5V I D = 1.7A VDS = 4.5V I D = 2.0A VGS = 0V I S = 1.0A VGS = 10V VDS = 30V ID = 2.0A VGS = 0V VDS = 25V f = 1MHz VDD = 30V R L = 30Ω ID = 1A R G = 6Ω VGEN = 4.5V V nA µA A Ω S V nc pF ns ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) NOTES: 1) Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2% STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Document Number 5331 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.