SML20S56 SEME-LAB | Alldatasheet
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5/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 200 224 ±20 ±30 300 2.4 –55 to 150 300 1300 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 0.83mH, RG = 25/c87 , Peak IL = 56A VDSS 200V ID(cont) 56A R DS(on) 0.045/c87/c87/c87/c87
- Faster Switching
- Lower Leakage
- 100% Avalanche Tested
- Surface Mount D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G Dimensions in mm (inches) 15.95 (0.628) 16.05 (0.632) 1.04 (0.041) 1.15 (0.045) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 5.45 (0.215) BSC 2 plcs. 2.67 (0.105) 2.84 (0.112) 1.27 (0.050) 1.40 (0.055) 13.41 (0.528) 13.51 (0.532) 13.79 (0.543) 13.99 (0.551) 13 2 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 11.51 (0.453) 11.61 (0.457) 3.81 (0.150) 4.06 (0.160) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source Heatsink is Drain.
5/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 224 1.3 280 3.5 IS ISM VSD trr Q rr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A//c109 s IS = – ID [Cont.] , dls / dt = 100A//c109 s Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns /c109 C Characteristic Min. Typ. Max. Unit 0.42 R /c113 JC R /c113 JA Junction to Case Junction toAmbient °C/W SOURCE – DRAIN DIODE RA TINGS AND CHARA CTERISTICS THERMAL CHARA CTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/c109 S , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.6/c87 pF nC ns 4130 980 325 145 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Characteristic Test Conditions Min. Typ. Max. Unit BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250/c109 A VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current Drain – Source On State Resistance 2 200 250 ±100 2 4 0.045 V /c109 A nA V A /c87 STATIC ELECTRICAL RA TINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARA CTERISTICS