SML200HB12 SEME-LAB | Alldatasheet
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Technical content
Collector-emitter Voltage Vce 1200 V DC Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom Ic 200 295 A Repetitive peak Collector Current tp=1msec,Tc=80C I crm 400 A Total Power Dissipation Tc=25C Ptot 2380 W Gate-emitter peak voltage Vges +/-20 V DC Forward Diode Current I f 200 A Repetitive Peak Forward Current tp=1msec I frm 400 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C t 7800 A2sec Isolation voltage RMS, 50Hz, t=1min V isol 2500 V Attributes: -Aerospace build standard -High reliability -Lightweight -Metal matrix base plate -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties SML200HB12 Collector-emitter saturation voltage Ic=200A,Vge=15V, Tc=25C Ic=200A,Vge=15V,Tc=125C V ce(sat) 1.7 2.0 2.15 V Gate Threshold voltage Ic=8mA,Vce=Vge, Tvj=25C Vge (th) 5.0 5.8 6.5 V Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 14 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.5 nF Collector emitter cut off current Vce=1200V,Vge=0V,Tvj=25C I ces 1 5 mA Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C I ges 400 nA
Turn on delay time Ic=200A, Vcc=600V Vge=+/15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C td,on 250 300 nsec nsec nsec Rise time Ic=200A, Vcc=600V Vge=+/-15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C tr 100 nsec nsec nsec Turn off delay time Ic=200A, Vcc=600V Vge=+/-15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C t d,off 550 650 nsec nsec nsec Fall time Ic=200A, Vcc=600V Vge=+/-15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C t f 130 180 nsec nsec nsec Turn on energy loss per pulse Ic=200A,Vce=600V,Vge=+/-15V Rge=3.6Ω,L=30nH Tvj=25C di/dt=6000A/µsec Tvj=125C E on mJ mJ Turn off energy loss per pulse Ic=200A,Vce=600V,Vge=+/-15V Rge=3.6Ω,L=30nH Tvj=25C di/dt=4000A/µsec Tvj=125C E off 35.0 mJ mJ SC Data tp≤10µsec, Vge≤15V Vcc=900V, Vce (max)=Vces-Lσdi/dt Tvj=125C Isc 800 A Stray Module inductance L σce 20 nH Terminal-chip resistance R c 0.7 m Ω Forward voltage Ic=200A,Vge=0V, Tc=25C Ic=200A,Vge=0V, Tc=125C V f 1.65 1.65 2.15 V V Peak reverse recovery current If=200A, -di/dt=2000A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C I rm 150 190 A A Recovered charge If=200A, -di/dt=2000A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C Qr µC µC Reverse recovery energy If=200A, -di/dt=2000A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C E rec mJ mJ Diode characteristics
Thermal resistance junction to case Igbt Diode R θJ-C 0.063 0.11 K/W Thermal resistance case to heatsink R θC-hs 0.03 K/W Maximum junction temperature Tvj 175 C Maximum operating temperature Top -55 175 C Storage Temperature Tstg -55 175 C Thermal Properties Min Typ Max