SML150FB12 SEME-LAB | Alldatasheet
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Technical content
Collector-emitter Voltage Vce 1200 V DC Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom Ic 150 200 A Repetitive peak Collector Cur- rent tp=1msec,Tc=80C I crm 300 A Total PowerDissipation Tc=25C P tot 850 W Gate-emitter peak voltage Vges +/-20 V DC Forward Diode Current I f 150 A Repetitive Peak Forward Current tp=1msec I frm 300 A I2t value per diode Vr=0V, tp=10msec, Tvj=125C t 4600 A2sec Isolation test voltage RMS, 50Hz, t=1min V isol 2500 V Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/Electrical Properties SML150FB12 Collector-emitter saturation voltage Ic=150A,Vge=15V, Tc=25C Ic=150A,Vge=15V,Tc=125C V ce(sat) 1.70 2.0 2.15 V V Gate Threshold voltage Ic=6.4mA,Vce=Vge, Tvj=25C Vge (th) 5.0 5.8 6.5 V Input capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cies 10.5 nF Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V, Vge=0V Cres 0.5 nF Collector emitter cut off current Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C I ces 1 5 mA mA Gate emitter cut off current Vce=0V,Vge=20V,Tvj=25C I ges 400 nA
Turn on delay time Ic=150A, Vcc=600V Vge=+/15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C td,on 250 300 nsec nsec Rise time Ic=150A, Vcc=600V Vge=+/-15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C tr 100 nsec nsec Turn off delay time Ic=150A, Vcc=600V Vge=+/-15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C t d,off 550 650 nsec nsec Fall time Ic=150A, Vcc=600V Vge=+/-15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C t f 130 160 nsec nsec Turn energy loss per pulse Ic=150A,Vce=600V,Vge=15V Rge=8.2Ω,L=80nH Tvj=125C E on mJ Turn off energy loss per pulse Ic=150A,Vce=600V,Vge=15V Rge=8.2Ω,L=80nH Tvj=125C Eoff mJ SC Data tp≤10µsec, Vge≤15V Vcc=900V, Vce(max)=Vces-Lσdi/dt Tvj=125C Isc 600 A Stray Module inductance Lσce 40 nH Terminal-chip resistance Rc 1.2 m Ω Forward voltage Ic=150A,Vge=0V, Tc=25C Ic=150A,Vge=0V, Tc=125C Vf 1.65 1.65 2.1 V V Peak reverse recovery current If=150A, -di/dt=1500A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C I rm 110 140 A A Recovered charge If=150A, -di/dt=1500A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C Qr µC µC Reverse recovery energy If=150A, -di/dt=1500A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C E rec 7.0 mJ mJ Diode characteristics
Thermal resistance junction to case Igbt Diode R θJ-C 0.15 0.26 K/W Thermal resistance case to heatsink R θC-hs 0.03 K/W Maximum junction temperature Tvj 175 C Maximum operating temperature Top -55 175 C Storage Temperature Tstg -55 175 C Thermal Properties Min Typ Max