SML10J144 SEME-LAB | Alldatasheet
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5/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 100 144 576 ±30 ±40 450 3.6 –55 to 150 300 144 2500 V A A V W W/°C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 241µH, RG = 25W , Peak IL = 144A VDSS 100V ID(cont) 144A R DS(on) 0.011WW
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- Popular SOT–227 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G R 38.0 (1.496) 38.2 (1.504) 30. 1 ( 1. 185) 30. 3 ( 1. 193) 14.9 (0.587) 15.1 (0.594) 3.3 (0.129) 3.6 (0.143) 7. 8 ( 0. 307) 8. 2 ( 0. 322) 31. 5 ( 1. 240) 31. 7 ( 1. 248) 4.0 (0.157) (2 Places)R = 4. 0 ( 0. 157) 4. 2 ( 0. 165) 4. 1 ( 0. 161 4. 3 ( 0. 169 4. 8 ( 0. 187) 4. 9 ( 0. 193) (4 places) W = H = 8. 9 ( 0. 350) 9. 6 ( 0. 378) 11. 8 ( 0. 463) 12. 2 ( 0. 480) Hex Nut M4 (4 places) 12. 6 ( 0. 496) 12. 8 ( 0. 504) 25. 2 (0. 992) 25. 4 (1. 000) 0. 75 ( 0. 030) 0. 85 ( 0. 033) 5. 1 (0. 201) 5. 9 (0. 232) 1. 95 ( 0. 077) 2. 14 ( 0. 084) SOT–227 Package Outline. Dimensions in mm (inches) Source terminals are shorted internally. Current handling capability is equal for either Source terminal. S GS D
5/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 144 576 1.3 250 2.5 IS ISM VSD trr Q rr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns mC Characteristic Min. Typ. Max. Unit 0.28 R qJC R qJA Junction to Case Junction to Ambient °C/W SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 0.6W pF nC ns 8600 3250 1180 310 120 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Characteristic Test Conditions Min. Typ. Max. Unit BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250mA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 2.5mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current Drain – Source On State Resistance 2 100 250 1000 ±100 144 0.011 V mA nA V A W STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARACTERISTICS