SML100C4 SEME-LAB | Alldatasheet
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Characteristic Min. Typ. Max. Unit 1.00 R /G71 JC R /G71 JA Junction to Case Junction to Ambient °C/W THERMAL CHARACTERISTICS SML100C4 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. VDSS ID IDM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation @ T case = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 1000 3.6 14.4 ±30 125 1.0 -55 to +150 300 V A V W W/°C ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS 1000V ID(cont) 3.6A R DS(on) 4.00/G57/G57/G57/G57 Faster Switching Lower Leakage TO–254 Hermetic Package D S G 123 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) 3.78 (0.149)Dia. 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC 0.89 (0.035) BSC TO –254 Package Outline. Dimensions in mm (inches) Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
Characteristic Test Conditions Min. Typ. Max. Unit Drain to Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time f = 1MHz V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.8/G57 Characteristic Test Conditions Min. Typ. Max. Unit 3.6 14.4 1.3 290 580 1.65 3.3 IS ISM VSD trr Q rr (Body Diode) (Body Diode) V GS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/µs IS = – ID [Cont.] , dls / dt = 100A/µs Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns µC SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS C DC C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf pF pF nC ns DYNAMIC CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit SML100C4 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Min. Typ. Max. Unit 125 125 3.6 SOA1 SOA2 I LM Safe Operating Area Safe Operating Area Inductive Current Clamped V DS = 0.4VDSS , IDS = PD / 0.4VDSS , t = 1 Sec. IDS = ID [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec. W A SAFE OPERATING AREA CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. BV DSS IDSS IGSS VGS(TH) ID(ON) R DS(ON) VGS = 0V , ID = 250µA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 1000 250 1000 ±100 3.6 4.00 V µA nA V A /G57 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) 15 22 805 950 115 160 37 60 35 55 4.3 7 18 27 10 20 12 24 33 50 16 32