SML1004R2GXN SEME-LAB | Alldatasheet
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit Prelim. 5/94 BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) VDSS ID IDM VGS PD TJ , TSTG TL 123 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) 3.56 (0.140) 3.81 (0.150) 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 0.64 (0.025) 0.89 (0.035) 3.05 (0.120) BSC 2.54 (0.100) BSC Dia. 12.07 (0.500) 19.05 (0.750) Dia. TO–257 Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation @ T case = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. V GS = 0V , ID = 250/G6D A VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 1000 3.0 ±30 100 0.8 –55 to 150 300 V A A V W W / °C Drain – Source Breakdown Voltage On State Drain Current Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage 1000 3.0 4.20 250 1000 ±100 V A /G57 /G6D A nA V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) SML1004R2GXN LAB SEME VDSS 1000V ID(cont) 3.0A RDS(on) 4.20/G57/G57/G57/G57 4TH GENERATION MOSFET Pin 1 Gate Pin 2 Drain Pin 3 Source Pinout same as TO–220 Package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. SML1004R2GXN Characteristic Test Conditions Min. Typ. Max. Unit CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 3.0 1.3 150 290 580 0.8 1.65 3.3 Prelim. 5/94 IS ISM VSD trr Qrr VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A//G6D s Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns /G6D C Characteristic Test Conditions Min. Typ. Max. Unit 100 100 SOA1 SOA2 I LM Safe Operating Area , t = 1 Sec Safe Operating Area , t = 1 Sec Inductive Current Clamped W A Characteristic Min. Typ. Max. Unit 1.20 R/G71 JC R/G71 JA Junction to Case Junction to Ambient °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS SAFE OPERATING AREA CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380/G6D S , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Drain to Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time f = 1MHz V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.8/G57 pF pF nC ns 81 2 805 950 115 160 37 60 35 55 4.3 7 18 27 10 20 12 24 33 50 16 32 LAB SEME CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. VDS = 0.4VDSS , IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] , IDS = ID [Cont.]