SML09GB22U2 SEME-LAB | Alldatasheet
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-55 + 175°C -55 + 150°C 78W 3.2°C/W VRRM Repetitive Peak Reverse Voltage IFAV Average Forward Current TC = 25°C TC = 90°C IFSM Maximum surge forward current Tvj = 45 °C; tp = 10ms (50Hz), sine Tvj Virtual Junction Temperature Tstg Storage Temperature Range Ptot TC = 25°C Rthjc Thermal Characteristics ABSOLUTE MAXIMUM RATINGS(TC = 25°C unless otherwise stated) SML09GB22U2 Document Number 2931 Issue 2 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. MECHANICAL DATA Dimensions in mm (inches) /G33/G2E /G36/G30/G20 /G28 /G30/G2E /G31/G34/G32/G29 /G4D/G61 /G78 /G2E /G33/G2E /G37/G30/G20 /G28 /G30/G2E /G31/G34/G36/G29 /G33/G2E /G34/G31/G20 /G28 /G30/G2E /G31/G33/G34/G29 /G33/G2E /G37/G30/G20 /G28 /G30/G2E /G31/G34/G36/G29 /G33/G2E /G34/G31/G20 /G28 /G30/G2E /G31/G33/G34/G29 /G30/G2E /G38/G39 /G28 /G30 /G2E /G30/G33/G35/G29 /G6D/G69 /G6E /G2E /G34/G2E /G31/G34/G20 /G28 /G30/G2E /G31/G36/G33/G29 /G33/G2E /G38/G34/G20 /G28 /G30/G2E /G31/G35/G31/G29 /G31/G30/G2E /G36/G39/G20 /G28 /G30 /G2E /G34 /G32/G31/G29 /G31/G30/G2E /G33/G39/G20 /G28 /G30 /G2E /G34 /G30/G39/G29 /G39/G2E /G36/G37/G20 /G28 /G30/G2E /G33/G38/G31/G29 /G39/G2E /G33/G38/G20 /G28 /G30/G2E /G33/G36/G39/G29 /G31/G31/G2E /G35/G38/G20 /G28 /G30 /G2E /G34 /G35/G36/G29 /G31/G31/G2E /G32/G38/G20 /G28 /G30 /G2E /G34 /G34/G34/G29 /G31/G36/G2E /G30/G32/G20 /G28 /G30 /G2E /G36 /G33/G31/G29 /G31/G35/G2E /G37/G33/G20 /G28 /G30 /G2E /G36 /G31/G39/G29 /G30/G2E /G35/G30/G20 /G28 /G30/G2E /G30/G32/G30/G29 /G30/G2E /G32/G36/G20 /G28 /G30/G2E /G30/G31/G30/G29 /G30/G2E /G37/G36 /G28 /G30 /G2E /G30/G33/G30/G29 /G6D/G69 /G6E /G2E /G31/G33 /G32 SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY
APPLICATIONS
Parameter Test Conditions Min. Typ. Max. Unit IR* Reverse Current VF* Forward Voltage CJ Capacitance TVJ = 25°C V R = VRRM TVJ = 125°C V R = VRRM IF = 5A T VJ = 125°C IF = 5A T VJ = 25°C VR = 100V T VJ = 125°C 1.3 1.3 1.3 1.2 1.5 mA V P F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PACKAGE SMD1 (TO-267AB) PAD 1 — Anode PAD 2 — Cathode PAD 3 — Not used Underside View
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. FIG. 1 TYP. FORWARD CHARCTERISTICS FIG. 2 TYP. JUNCTION CAPACITY VERSUS BLOCKING VOLTAGE NOTE: Explanatory comparison for the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes. Rectifier Diode GaAs Schottky Didoe Conduction by majority + minority carriers by majority carriers only forward characteristics V F (IF)V F(IF), See Fig 1 turn off characteristics extraction of excess carriers reverse current charges causes temperature dependant junction capacity C j, see Fig 2; reverse recovery (trr, IRM, Qrr) not temperature dependant turn on characteristics delayed saturation leads to V FR no turn on overvoltage peak.