SML01SC06C3 TTELEC | Alldatasheet

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SSSSiiiilllliiiiccccoooonnnn CCCCaaaarrrrbbbbiiiiddddeeee SSSScccchhhhoooottttttttkkkkyyyy BBBBaaaarrrrrrrriiiieeeerrrr DDDDiiiiooooddddeeee SML01SC06C3A / SML01SC06C3B / SML01SC06C3C Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Zero Equivalent Reverse Recovery Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: Issu Page: 10019 1 of 5 Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRR M Re petitive Peak Reverse Voltage 600V VRSM Surge Peak Reverse Voltage 600V VDC Dc Blocking Voltage 600V IF(AVG)(1) Average Forward Current, TJ = 175°C 1A PD Total Power Dissipation, TSP = 25°C 4W De-rate Above 25°C 20mW /°C TJ Junction Temperature Range -55 to +225°C TSTG Storage Temperature Range -55 to +225°C THERMAL PROPERTIES Symbols Parameters Max . Units RθJSP (IN) Thermal Resistance, Junction To Solder Pads TSP = 25°C 50 °C/W RθJA (PCB)(2) Thermal Resistance, Junction To Ambient, On PCB 115 °C/W RθJA (PCB)(3) Thermal Resistance, Junction To Ambient, On PCB 175 °C/W Notes (1) IO1 is rated at 1.1A @ TA = 25°C for PC boards where the rmal resistance from mounting point to ambient is sufficiently controlled where TJ(Max) does not exceed 225°C; This equates to RθJA (PCB) ≤ 115°C/W. rated at 0.8A @ TA = 25°C for PC boards where RθJA (PCB) ≤ 175°C/W. De-rate at 4mA/°C above TA = 25°C in this case.

SS SSiliconilicon iliconilicon Carbide Schottky Barrier DiodeCarbide Schottky Barrier DiodeCarbide Schottky Barrier DiodeCarbide Schottky Barrier Diode SML01SC06C3A / SML01SC06C3B / S ML01SC06C3C Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10019 2 of 5 Notes (4) Indicative measurements by design. E LECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Units VF Diode Forward Voltage IF = 1.0A TJ = 25°C 1.6 1.8 V IF = 1.0A TJ = 175°C 2.0 2.4 IR Leakage Current VR = 450V TJ = 25°C 5 µ A VR = 600V TJ = 25°C 100 VR = 600V TJ = 175°C 500 DYNAMIC CHARACTERISTICS QC Total Capacitive Charge(4) VR = 500V IF = 1.0A di/dt = 500A/µ s TJ = 25°C 3.3 nC C Total Capacitance(4) VR = 0V TJ = 25°C f = 1.0MHz 80 p F VR = 200V TJ = 25°C f = 1.0MHz 11

SS SSiliconilicon iliconilicon Carbide Schottky Barrier DiodeCarbide Schottky Barrier DiodeCarbide Schottky Barrier DiodeCarbide Schottky Barrier Diode SML01SC06C3A / SML01SC06C3B / S ML01SC06C3C Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10019 3 of 5 TYPICAL CHARACTERISTICS 100 150 200 250 300 350 400 450 500 100 120 140 160 180 200 220 240 IR, Leakage Current (nA) Temperature (°C) Leakage Current (IR) IR 0.5 1.5 2.5 100 120 140 160 180 200 220 240 VF, Forward Voltage (V) Temperature (°C) Diode Forward Voltage (VF) VFIF = 1A VR = 600V

SS SSiliconilicon iliconilicon Carbide Schottky Barrier DiodeCarbide Schottky Barrier DiodeCarbide Schottky Barrier DiodeCarbide Schottky Barrier Diode SML01SC06C3A / SML01SC06C3B / S ML01SC06C3C Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10019 4 of 5 N otes (5) SiC Schottky Diode, no minority carrier recombinatio n thus zero reverse recovery. Recovery time shown is due to a small junction capacitance charge and is independent of junction temperature. -1.200 -1.000 -0.800 -0.600 -0.400 -0.200 0.000 0.200 0.400 0.600 Current (A) Time (nS) Equivalent Reverse Recovery Time ( 5) -55°C 25°C 175°CIF = 500mA IR = 1A IRR = 250mA VR = 600V

Silicon Carbide Schottky Barrier DiodeSilicon Carbide Schottky Barrier DiodeSilicon Carbide Schottky Barrier DiodeSilicon Carbide Schottky Barrier Diode SML01SC06C3A / SML01SC06C3B / S ML01SC06C3C Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10019 5 of 5 M ECHANICAL DATA Dimensions in mm (inches) LCC3 (MO-041BA) Underside View Variant Pad 1 Pad 2 Pad 3 Pad 4 SML01SC06C3A Cathode Anode N/C N/C SML01SC06C3B Cathode N/C Anode N/C SML01SC06C3C Cathode N/C N/C Anode 5.59 ± 0.13 (0.22 ± 0.005) 0.23 (0.009) rad. 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) 1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 (0.009) min. 1.27 ± 0.05 (0.05 ± 0.002 ) 3.81 ± 0.13 (0.15 ± 0.005 ) 0.64 ± 0.08 (0.025 ± 0.003 )