SMG2398NE VBSEMI | Alldatasheet

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Technical content

N-Channel 60-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Available  TrenchFET ® Power MOSFET  100 % R g Tested  100 % UIS Tested

APPLICATIONS

 Battery Switch  DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.075 at VGS = 10 V 4.0 2.1 nC 0.086 at VGS = 4.5 V 3.8 G S D Top View TO-236 (SOT23) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. Maximum under Steady State conditions is 120 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.0 A TC = 70 °C 3.4 TA = 25 °C 3.1b, c TA = 70 °C 2.5b, c Pulsed Drain Current IDM 12 Continuous Source-Drain Diode Current TC = 25 °C IS 1.39 TA = 25 °C 0.91b, c Avalanche Current L = 0.1 mH IAS 6 Single-Pulse Avalanche Energy EAS 1.8 mJ Maximum Power Dissipation TC = 25 °C PD 1.66 WTC = 70 °C 1.06 TA = 25 °C 1.09b, c TA = 70 °C 0.7b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d ≤ 5 s RthJA 90 115 °C/WMaximum Junction-to-Foot (Drain) Steady State R thJF 60 75 S N-Channel MOSFET G D SMG2398NE www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those ind i cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 60 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 55 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 8A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 1.9 A 0.075 ΩVGS = 4.5 V, ID = 1.7 A 0.086 Forward Transconductancea gfs VDS = 15V, ID = 1.9 A 5S Dynamicb Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz 180 pF Output Capacitance Coss 22 Reverse Transfer Capacitance Crss 13 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 1.9 A 4.2 6.1 nCVDS = 30 V, VGS = 4.5 V, ID = 1.9 A 2.1 3.2 Gate-Source Charge Qgs 0.7 Gate-Drain Charge Qgd 1 Gate Resistance Rg f = 1 MHz 0.6 2.2 5.1 Ω Tur n-On Delay Time td(on) VDD = 30 V, RL = 20 Ω ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 10 15 Fall Time tf 71 0 . 5 Tur n-On Delay Time td(on) VDD = 30 V, RL = 20 Ω ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 15 23 ns Rise Time tr 16 24 Turn-Off Delay Time td(off) 11 17 Fall Time tf 11 17 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.19 A Pulse Diode Forward Currenta ISM 7 Body Diode Voltage VSD IS = 1.5 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 23 ns Body Diode Reverse Recovery Charge Qrr 10 15 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 3 SMG2398NE www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =1 0t h ru 5 V VGS =2 V VGS =3 V VGS =4 V 0.04 0.08 0.12 0.16 0.20 0246 8 10 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 012345 ID =2.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =4 8V VDS =3 0V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 125 °C TC =2 5 ° C TC = - 55 °C Crss0 120 180 240 300 0 1 02 03 04 05 06 0 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 T J -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS =10V,I D =2.5A VGS =4 . 5V,I D =1 . 7A SMG2398NE www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S TJ = 25 °C 0.1 1.2 1.5 1.8 2.1 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.10 0.15 0.20 0.25 0.35 34567 8 91 0 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =2.5 A )W( r ewo P Time (s) 1 600 10 0.1 0.01 100 T A = 25 °C Single Pulse Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID 0.1 0.1 1 10 TA = 25 °C Single Pulse 1m s 10 ms 100 ms 0.01 1s ,1 0s DCBVDSS Limited 100 100 µs Limited byR DS(on)* SMG2398NE www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissip ation PD is based on TJ(max.) = 15 0 °C, using junction-to-case thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the curre nt rating, when this rating falls below the package limit. Current Derating* 0.0 3 0 0 255 07 5 1 0 0 1 2 5 1 5 0 T C - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-Case 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) SMG2398NE www.VBsemi.com g A ll data sheet.com

Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 1 10 10 -1 10 -4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T THERMAL RATINGS (TA = 25 ° C, unless otherwise noted) SMG2398NE www.VBsemi.com g A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 SMG2398NE www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) SMG2398NE www.VBsemi.com g A ll data sheet.com

All products due to improve reliability, function or design or for other reas ons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all pe rsons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibi lity for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any i nformation related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for a ny particular purpose of any goods or continuous production. To the maximum extent permitted by app licable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use o f any products; (2) any and all liability, including but not limited to special, consequential damages or inciden tal ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability gua rantee. Statement on certain types of applications are based on knowledge of the pro duct is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropria te for use in a particular application. Parameter data sheets and technical specifications can be provided may va ry depending on the application and performance over time. All operating parameters, including typical paramet ers must be made by customer's technical experts validated for each customer application. Product speci fications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warra nty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended f or use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi p roduct failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applicatio ns using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to produ ct design applications and other terms and conditions in writing. The information provided in this document and the company's products witho ut a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBs emi act or document. Product names and trademarks referred to herein are trademarks of their respective represen tatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are d etermined to be RoHS compliant and meets the definition of restrictions under Directive of the Eu ropean Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous subst ances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective 2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note th at some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure tha t all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. SMG2398NE www.VBsemi.com A ll data sheet.com