SMF404 SOLITRON | Alldatasheet
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1000V N-Channel Power MOSFET - 1 CALL: +1 561-848-4311 www.solitr ondevices.com EMAIL: sales@solitr ondevices.com CALL: +1 561-848-4311 www.solitr ondevices.com EMAIL: sales@solitr ondevices.com 1-D 3-G 2-S ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE TEST CONDITIONS Drain-Source Voltage VDSmax 1000V V GS = 0V, ID = 100µA Gate-Source Voltage (dynamic) VGSM ±30V Transient Gate-Source Voltage VGSS ±20V Continuous Drain Current, continous ID25 15A T C = 25°C Drain Current, pulsed ID(PULSE) 40A Pulse width T p limited by TJmax Power Dissipation PD 280W T C = 25°C Junction Temperature Range, Operating Junction Temperature Range, Storage TJ TSTG -55°C to 150°C ORDERING GUIDE Part Number SMF404 Description 1000V N-Channel Power MOSFET KEY FEATURES ID 15A RDS(on) 760mΩ FAST RECOVERY DIODE AVALANCHE RATED TO-258 HERMETIC PACKAGE BACKSIDE ISOLATION JANTX, JANTXV SCREENING AVAILABLE
1000V N-Channel Power MOSFET - 2 Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, Florida 33411, USA • +1 561-848-4311 • sales@solitrondevices.com BODY DIODE CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Body Diode Forward Voltage I F = IS, VGS = 0V, TJ = 25°C VSD 1.5 V Body Diode Reverse Recovery Time V r = 100V, VGS = 0V, ID = 7.5A, di/dt = 100A/µs T rr 500 ns Body Diode Reverse Recovery Charge IF = 28A, di/dt = 100A/µs, VR = 100V QRM 0.6 nC Source to Drain Diode Current, cont. V GS = 0V IS 15 A Pulse Diode Forward Current Repetitive, pulse width limited by T JM ISM 60 A ELECTRICAL SPECIFICATIONS (TJ = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage V GS = 0V, ID = 1mA V(BR)DSS 1000 V Gate Threshold Voltage VDS = VGS, ID = 1mA, TJ = 25°C VGS(th) 3.5 6.5 V Off -State Drain Current VDS = 1000V, VGS = 0V, TJ = 25°C VDS = 1000V, VGS = 0V, TJ = 125°C IDSS 25 µA 1 mA Gate-Source Leakage Current V GS = ±20V, VDS = 0V IGSS ±100 nA Drain-Source On-state Resistance V GS = >20V, ID = 7.5A, TJ = 25°C RDS(on) 760 900 mΩ Transconductance VDS = >20V, ID = 7.5A, TJ = 25°C Gfs 6.5 8.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0V, VDS = 25V, f = 100kHz Ciss Coss Crss 5140 322 pF Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V, VDS = 0.5 x VDSS, IDS = 0.5 x ID25 Qg(on) Qgs Qgd nC Turn On Delay Time Rx Time Turn Off Delay Time Fail Time V GS = 10V, VDS = 0.5 x VDSS, IDS = 7.5 x ID25, RG = 2Ω (external) td(on) tr td(off) tf ns Thermal Resistance R thJC 0.445 °C/W