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Dual 650V Silicon Carbide Schottky Diode - 1 CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com KEY FEATURES VRRM 650V IF @ 125°C 50A BACKSIDE ISOLATION SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C. Reverse Voltage VR 1300V Repetitive Peak Voltage VRRM 1300V Surge Peak Reverse Voltage VRSM 1300V DC Blocking Voltage VDC 1300V Isolation Voltage VISO 1500V DC Forward Current IF(avg) 50A 50A TC = 25°C TC = 125°C Repetitive Peak Forward Current IFRM 46A 30A TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse Non-Repetative Forward Surge Current IFSM 90A 70A TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse Power Dissipation PD 150W 180W TC = 25°C TC = 125°C Maximum Case Temperature TC(max) +125°C Maximum Junction Temperature TJ(max) +175°C Operating Temperature Range T -55°C to +125°C Storage Temperature Range TSTG -55°C to +125°C Lead Temperature for 10 Seconds TL 220°C BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY
APPLICATIONS
HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ORDERING GUIDE Part Number SDD50065SHD Description Dual 650V Silicon Carbide Diode D2 D1 2 1
Dual 650V Silicon Carbide Schottky Diode - 2 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com TYPICAL PERFORMANCE CURVES T = +200°C T = +175°C T = +150°C T = +125°C T = +25°C T = -55°C FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT FORWARD CURENT (A) 0.1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT (µA) 120 100 REVERSE VOLTAGE (V) 200 400 600 800 1000 1200 1300 T = +200°C T = +175°C T = +150°C T = +125°C T = +25°C T = -55°C 900 800 700 600 500 400 300 200 100 0 200 400 600 800 1000 1200 CAPACITANCE (pF) CAPACITANCE VS. REVERSE VOLTAGE REVERSE VOLTAGE (V) 0.1 0.01 THETA (C/W) MAXIMUM THERMAL IMPEDANCE TIME (s) 1.E+01 900 800 700 600 500 400 300 200 100 0 200 400 600 800 1000 1200 CAPACITANCE (pF) CAPACITANCE VS. REVERSE VOLTAGE REVERSE VOLTAGE (V) 0.1 0.01 THETA (C/W) MAXIMUM THERMAL IMPEDANCE TIME (s) 1.E+01
Dual 650V Silicon Carbide Schottky Diode - 3 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com sdd50065shd-ds-revB-1117.indd © 2017 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Symbol Min. Typ. Max. Unit DC Blocking Voltage VDC 1300 V Forward Voltage IF = 50A, TJ = 25°C IF = 50A, TJ = 125°C VF 3.0 3.6 V V Reverse Current VR = 1300V, TJ = 25°C VR = 1300V, TJ = 125°C IRM 500 1000 µA µA Total Capacitive Charge IF = 50A QC 84 150 nC Total Capacitance 0V, f = 1MHz 200V, f = 1MHz 400V, f = 1MHz 600V, f = 1MHz 800V, f = 1MHz 1000V, f = 1MHz C 806 162 100 pF Switching Time IF = 50A TRR 60 nS PACKAGE OUTLINE THERMAL AND MECHANICAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Thermal Resistance, Junction to Case RӨ(JC) 0.92 °C/W Weight W 6.3 6.8 g Mounting Torque MS 1.2 1.76 N-m PIN DESCRIPTION Pin Description
1 Cathode
2 Anode
0.140 (3.26) 0.242 (6.15) 0.626 (15.90) 0.250 (6.35) 0.506 (12.85) 0.220 (5.60) 0.173 (4.40) 0.819 (20.80) 0.823 (20.90) 0.168 (4.27) 0.798 (20.27) 0.078 (1.98) 0.047 (1.19) 0.023 (0.58) 0.094 (2.40) 0.079 (2.00) 0.198 (5.08) 0.428 (10.87) 0.120 (3.05) 0.025 ±0.005 (0.64 ±0.13) DEEP MAX. EJECTOR PIN MARKS [x2] HEATSINK SURFACE TAPERED HOLE dia. 0.145 (dia. 3.68) FRONT SIDE 1 2 SCHEMATIC D2 D1 2 1