SMF06020 SAMSUNG | Alldatasheet
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Samsung Microwave Power Optimized GaAs FET 2-14 GHz Description Features The SMF-06020 Is a packaged version of the SMF-06000. * +24.5 dBm output power with 7.5 dB associated gain The chip is a 600 pm n-channel MESFET with 0.5 um gate at 6 GHz length, utilizing Samsung Microwave’s power optimized P5 . process. The SMF-06000 active layer Is formed by ion Cirle nla! dealin proves tight powareccied implantation, Ti/Pt/Au gate metallization and large “T” cross loncy section minimize parasitic resistance while providing high * Large cross section TVPt/Au gates enhance durability reliability and ruggedness for RF overdrive. Ohmic metalliza- and Reliabitity tion is Au/Ge/Ni. * Chip devices are selected from standard Military Assembly techniques complement the ruggedness of the Grade Wafers chip, Eutectic die attach, thermocompression wedge bonding . with gold wire, and @ 100 mil hermeticalh Jed metal’ + Hermetic metal/ceramic package suitable for hi-rel ceramic package make the SMF-08020 suitable for the most APPacations demanding applications. * Custom electrical test and screening available for The chip devices are selected from Samsung Microwave's Source control drawings Miltary Grade waters, using 100% on-wafer DC probe data. The assembly process includes pre-cap visual inspection and 100% leak testing. Electrical tests include DC and RF performance to the Electrical Specifications listed. Standard shipping containers are conductive Gel-Paks with conductive foam liners, sealed in metallized bags for addi- tional ESD protection. When specified by Source Control Drawing, the SMF-06020 can be supplied with 100% screen- ing and Quality Conformance Inspection, such as described in MIL-S-19500. Customers with special electrical test or screening requirements should contact the factory. Package Outline rer Twa0 —— ro 061 (0024) TYP 40 (0 157) 7— DRAIN . ~ 2902020 wit 1.60 20.08 014 081 (0.024) TYP cee recoe) TYP "Ret ree ee eee =~ 2.494010 “6102008 a NS (0.088 + 0 004) (9.240 + 0.003) 0.80 (0031) TYP SOURCE —~ Drmeasons in GATE mibarerers (inches)
[we | toma me Tt a Note Because Maximum Available Gain is not formally defined from the S-Parameters at some frequencies, values shown are Maximum Tuned Gain. Se ee bs | semtaconigavie id = | lo a | mommies tt LL Product Ratings —— —_ | vos | Oamntosoucevetne | vaov_ | vtaov | Yes | Gaeosourevonwe | sev | tov Charind Tarmperatere, 4250°C Operating Note Permanent damage may result from operation at conditions beyond absolute masornum rabnigs
— SMF.06020 Typical $-Parameters [Vos = 8.0 V, Ing = 50% Ings) a ee ee ee Pat ae a po jm | [sf | 20 SM -09 10,04 4.176 1201 25 68 052 406 568 +96 30 as 84 aa? 2778 969 40 83 Bi 580 88
40 Co) 1196 750 2370 749 2310 O70 68 570 “892
50 Eo] 198 651 ans M6 2250 O7s 77 Sit wat
60 a8 188 4 5.23 1.828 263 2250 O75 21 625 176
70 Ed 1729 416 1614 193 “U2 069 30 632 1326
80 821 1757 319 14 33 23.88 084 407 6 052 90 a8 1652 240 1.318 38 2415 062 403 4S 1553 100 815 Wt 1a? 120 “Bs 23 88 064 +456 661 -187 noe aur 1422 1.45 1.182 370 23.88 064 76 ee 1755 120 ms 131 113 BAK] 821 2651 3 2 2) 1680 130 730 190 090 1108 A2 —24 6B 67 11 15 113 140 774 1069 DB 1102 786 “2 068 452 6 1554 i