SMF HDSEMI | Alldatasheet

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H igh Diode Semiconductor SOD1 23 FL Transient Voltage Suppressor Diodes Glass passivated chip● P PP 200W V RWM 5.0V- 440V Clamping Voltage

  • SMF From 5.0 To 440 XXCA/XXA XX Bi-directional Uni-direction SMF SERIES Item Symbol Unit Conditions Max Peak power dissipation P PPM W with a 10/1000us waveform 200 Peak pulse current I PPM A with a 10/1000us waveform See Next Table Operating junction and storage temperature range T J STG ℃ -55 to +150 Thermal resistance R θJL ℃/W Between junction and lead 26 R θJA ℃/W Between junction and Ambient 300 Notes: (1) Non-repetitive current pulse at T A =25℃,per waveform of Figure 2. (2) T L =30℃ unless otherwise noted , VF ≤1.25Volts@200mA

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor

H igh Diode Semiconductor

H igh Diode Semiconductor 1.0 0.15 2.8 0.15 1.8± 0.1 Cathode Band Top View 3.7 0.15 0.8 0.1 1.3± 0.1 0.12-0.20 Dimensions in millimeters 2.85 1.4 1.2 SOD-1 23FL SOD-1 23FL

Reel Taping Specifications For Surface Mount Devices-SOD123FL H igh Diode Semiconductor SOD123FL