SMF-06020 SAMSUNG | Alldatasheet
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Samsung Microwave Power Optimized GaAs FET 2-14 GHz Description Features The SMF-06020 Is a packaged version of the SMF-06000. * +24.5 dBm output power with 7.5 dB associated gain The chip is a 600 pm n-channel MESFET with 0.5 um gate at 6 GHz ' length, utilizing Samsung Microwave’s power optimized P5 . ' process. The SMF-06000 active layer is formed by ion Cirle nla! dealin proves tight powareccied | implantation, Ti/Pt/Au gate metallization and large “T” cross loncy 7 section minimize parasitic resistance while providing high * Large cross section TVPt/Au gates enhance durability reliability and ruggedness for RF overdrive. Ohmic metalliza- and Reliabitity tion is Au/Ge/Ni. * Chip devices are selected from standard Military Assembly techniques complement the ruggedness of the Grade Wafers . chip, Eutectic die attach, thermocompression wedge bonding . with gold wire, and @ 100 mil hermeticalh Jed metal’ + Hermetic metal/ceramic package suitable for hi-rel ceramic package make the SMF-08020 suitable for the most APPacations demanding applications. * Custom electrical test and screening available for The chip devices are selected from Samsung Microwave's Source control drawings Miltary Grade waters, using 100% on-wafer DC probe data. The assembly process includes pre-cap visual inspection and 100% leak testing. Electrical tests include DC and RF performance to the Electrical Specifications listed. Standard shipping containers are conductive Gel-Paks with i conductive foam liners, sealed in metallized bags for addi- tional ESD protection. When specified by Source Control Drawing, the SMF-06020 can be supplied with 100% screen- ing and Quality Conformance Inspection, such as described ‘ in MIL-S-19500. Customers with special electrical test or screening requirements should contact the factory. Package Outline rer Twa0 —— ro 061 (0024) TYP 40 (0 157) 7— DRAIN . ~ 250+020 wit 1.60 20.08 014 081 (0.024) TYP cee recoe) TYP "Ret ree ee eee =~ 2.494010 “6102008 a NS (0.088 + 0 004) (9.240 + 0.003) 0.80 (0031) TYP SOURCE —~ Drmeasons in GATE mibarerers (inches)
[we | toma me Tt a Note Because Maximum Available Gain is not formally defined from the S-Parameters at some frequencies, values shown are Maximum Tuned Gain. Se ee bs | semtaconigavie id = | lo a | mommies tt LL Product Ratings —— —_ | vos | Oamntosoucevetne | vaov_ | vtaov | Yes | Gaeosourevonwe | sev | tov Charind Tarmperatere, 4250°C Operating Note Permanent damage may result from operation at conditions beyond absolute masornum rabnigs
— SMF-06020 Typical $-Parameters [Vng = 8.0 V, Ing = 50% Ings) a ee ee ee oe pe jm | io | ll 20 ou -09 10,04 3.176 1201 25 68 ase 406 568 496 30 as 84 aa? 2778 969 40 83 Bi 580 88 40 980 1196 150 2370 49 -2310 070 68 570 992
50 Es] 1398 451 ans 46 250 075 17 sit 41
60 a8 188 4 5.23 1.828 263 2250 O75 21 625 176
70 Ed 1729 416 1614 93 | 22 069 30 632 1326
80 at 1757 319 1aee 33 23.88 084 407 6 052 90 a8 1652 240 1.318 38 2415 062 403 4S 1553 100 815 1541 18? 120 “2s 23 88 064 458 661 -¥87 noe aur 1422 1.45 1.182 370 23.88 064 76 ee 1755 120 8 1311 113 119 £21 2551 053 12 730 1680 130 70 1290 099 1108 42 24.08 05? 11 115 1613 140 77 1069 DB 1102 76 | -2322 068 452 6 1554