SMDJ

SMDJ HDSEMI | Alldatasheet

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Glass passivated chip● P PP 3000W V RWM 5.0V- 440V Clamping Voltage

• SMDJ From 5.0 To 440 XXCA/XXA XX SMC SMDJ SERIES NOTES: 1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2. 2. Mounted on 8.0mm x 8.0mm Copper Pads to each terminal. 3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum. Item Symbol Unit Conditions Max Peak power dissipation P PPM W with a 10/1000us waveform 3000 Peak pulse current I PPM A with a 10/1000us waveform See Next Table Peak forward surge current(2) I FSM A 8.3 ms single half sine-wave unidirectional only 300 Operating junction and storage temperature range T J STG ℃ -55 to +150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Part Number Add C For Bi-Directional (Note 4) Reverse Standoff Voltage Breakdown Voltage V BR @ I T (Note 5) Test Current Max. Reverse Leakage @ V RWM (Note 6) Max. Clamping Voltage @ I pp Max. Peak Pulse Current Ipp Marking Code V RWM (V) Min (V) Max (V) I T (mA) I R (/c109A) V C (V) (A) UNI- BI- RDE DDE RDG DDG RDK DDK PDM DDM PDP DDP PDR DDR PDT DDT PDV DDV PDX DDX PDZ DDZ PEE DEE PEG DEG PEK DEK PEP DEP PER DER PET DET PEM DEM PEV DEV PEX DEX PEZ DEZ PFE DFE PFG DFG PFK DFK PFM DFM PFP DFP PFR DFR PFT DFT PFV DFV PFX DFX PFZ DFZ PGE DGE PGG DGG PGK DGK PGM DGM PGP DGR PGR DGR

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Part Number Add C For Bi-Directional (Note 4) Reverse Standoff Voltage Breakdown Voltage V BR @ I T (Note 5) Test Current Max. Reverse Leakage @ V RWM (Note 6) Max. Clamping Voltage @ I pp Max. Peak Pulse Current Ipp Marking Code V RWM (V) Min (V) Max (V) I T (mA) I R (/c109A) V C (V) (A) UNI- BI- SMDJ190(C)A SMDJ200(C)A SMDJ220(C)A SMDJ250(C)A SMDJ300(C)A SMDJ350(C)A SMDJ400(C)A SMDJ440(C)A Notes: 4. Suffix C denotes Bi-directional device. 5. V BR measured with I T current pulse = 300/c109s 6. For Bi-Directional devices having V RWM of 10V and under, the I R is doubled. PHG DHG PHK DHK PHM DHM PHP DHP PHR DHR PHT DHT PHV DHV PHW DHW PHX DHX PHZ DHZ PJE DJE PJG DJG PJK DJK PJM DJM PGT DGT PGV DGV PGX DGX PGZ DGZ PHE DHE

H igh Diode Semiconductor t - Time(ms) 3.0 4.0 150 1.0 2.0 t r = 10μsec. Peak Value I PP M T J = 25°C Pulse Width(td)is defined as the point where the peak current decays to 50% of I PPM 10/1000μsec.Waveform as defined by R.E.A. t d Fig.3 - Pulse Waveform 4.0 Half Value- I PPM 100 I PPM - Peak Pulse Current,% I RSM 3.00 0.1 100 10ms 0.1μs 1.0μs 10μs 100μs 1.0ms t d - Pulse Width (sec.) Fi g . 1 - Peak Pulse Power Ratin g Curve P PPM -Peak Pulse Power (kW) Non-repetitive pulse waveform shown in Fig.3 T A = 25°C 100 1000 10000 100 1000 10000 C J - Capacitance (pF Fig. 4 - Typical Junction Capacitance V WM - Reverse Stand-Off Voltage (V) Unidirectional Bidirectional f = 1MHz V sig = 50mV p-p V R = 0 500 V R = Rated Stand off P M(AV) ,Steady State Powe r Dissipation (W) 0 25 50 75 100 125 150 175 200 1.0 2.0 3.0 4.0 Fig. 5 - Steady State Power Derating Curve T L - Lead Temperature (°C) 5.0 6.0 7.0 8.0 60Hz Resistive or Inductive Load 100 150 200 250 300 1 10 100 Number of C y cles at 60 H z Fig.6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 8.3ms Single Half Sine-Wave (JEDEC Method)T J J max. I FSM P ea k F orwar d S urge Current A 12.5 37.5 62.5 87.5 100 0 25 50 75 100 125 150 175 200 Fig.2 - Pulse Derating Curve Peak Pulse Power (P PP or Current (I PP Derating in Percentage,% T A - Ambient Temperature (°C) 100

H igh Diode Semiconductor 0.108 (2.75) 0.123 (3.25) 0.256(6.50) 0.280(7.10) 0.217(5.50) 0.240(6.10) 0.087(2.2) 0.106(2.7) 0.035(0.90) 0.055(1.40) 0.291(7.40) 0.331(8.40) 0.012(0.30) 0.007(0.17) 0.008(0.203)MAX. 6.5 3.5 1.8 SMC Suggested Pad Layout SMC

H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Devices-SMC