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S mHop Microelectronics C orp.a SMD10L50SP Symbol VRRM VRWM V 120 UnitParameter °C/W V V50Working Peak Reverse Voltage Peak Repetitive Reverse Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VRRM IO VF(MAX) @ 25 °C 50V 10A
FEATURES
Low Profile Design for Smart Phone Charger ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Value A Thermal Resistance, Junction-to-AmbientR JA www.samhop.com.tw Aug,01,2014 Details are subject to change without notice. V MOS Controlled Diode Green Product A ANODE PINS BOTTOMSIDE HEAT SINK VRM DC Blocking Voltage VR(RMS) RMS Reverse Voltage IO Average Rectified Output Current IFSM Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load 180 mJEAS Non-Repetitive Avalanche Energy (TJ= 25°C,IAS = 10,L = 5mH) W24000PARM Repetitive Peak Avalanche Energy IR(MAX) @ 25 °C 0.47V 0.5mA TJ Operating Temperature Range TSTG Storage Temperature Range -55 to 150 -55 to 175 Symbol UnitParameter Value V ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified ) Forward Voltage DropVF IR Leakage Current CT Total Capacitance uA pF Symbol UnitParameter Conditions IF = 10A, TJ = 25°C Min Typ Max 0.42 VR = 50V, TJ = 25°C 120 VR = 50V, f = 1MHz Ideal for SMT Mounting Low forward voltage drop High forward surge capability Excellent High Temperature Stability 200 VIF = 10A, TJ = 125°C 0.39 0.47 0.46 VR = 50V, TJ = 125°C 500 100 mA Top View Bottom View Ver 1.0 TO-277
www.samhop.com.tw Aug,01,2014 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-277 MILLIMETERS SYMBOLS MIN. MAX. A C D HE E L 6.606.40 5.805.60 4.304.10 1.901.70 1.000.80 1.201.05 0.30 0.40 0.85 1.10 Mounting Pad Layout (unit:mm) HE E D A C L 4.6 3.4 1.3 1.3 1.68 4.20 4.40 3.52 Typ. 1.10 1.40 3.00 3.30 1.86 Typ.
www.samhop.com.tw Aug,01,2014 Wafer Lot No. Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) Product No. TOP MARKING DEFINITION TO-277 10L50SP XXXXXX Ver 1.0 Assembly House