SM5817 DSK | Alldatasheet
Document overview
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Technical content
D2=D1 Đ Ē 0.20 0.5± 0.1 0.5± 0.1 4.9± 0.2 2.6± 0.15
FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC DO--213AB,molded plastic Terminals: Solderable per MIL- STD-202,method 208 Polarity: Color band deno tes cathode Weight: 0.0046 ounces,0.116 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS M axim um recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current A =90 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG SM5817- - - SM5819 A For use in low voltage,high frequency inverters free xxxx wheeling ,and polarity protection appli cations I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A DO-213AB The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SM5817 3.Thermal resistance junction to ambient,vertical PC board mounting,0.5"(12.7mm)lead length. mA I R I FSM NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. A - 55 ---- + 150 - 55 ---- + 150 110 1.0 10.0 1.0 Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A V F V SM5818 SM5819 0.90 0.600.45 0.75 0.55 0.875 SURFACE MOUNT Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
CAPACITANCE, pF AMPERES INSTANTANEOUS FORWARD CURRENT SM5817 - - - SM5819 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.1 -- FORWARD DERATING CURVE FIG.2 -- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT FIG.3 -- TYPICAL INSTANTANEOUS FORWARD X - CHARACTERISTICS PEAK FORWARD SURGE CURRENT REVERSE VOLTAGE,VOLTS FIG.4 -- TYPICAL JUNCTION CAPACITANCE T J =25℃ f=1.0MHz Vsig=50mVp-p 100 400 0.1 1 10 100 11 0 1 00 T J J MAX 8.3ms Single Half Sine-Wave 0.5 1.0 0 25 50 75 100 125 150 0.75 0.25 Resistive or Inductive Load 0.375"(9.5mm)Lead Length SM 5817 SM 5819 SM 5818 T J =25 Pulse width=300 s 1% Duty Cycle www.diode.kr Diode Semiconductor Korea