SM513 DSK | Alldatasheet
Document overview
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Technical content
D2=D1 Đ Ē 0.20 0.5± 0.1 0.5± 0.1 4.9± 0.2 2.6± 0.15
FEATURES
◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction MECHANICAL DATA ◇ Case:JEDEC DO-213AB,molded plastic over passivated chip ◇ Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.0046 ounces, 0.116 gram ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. 513 516 518 2000 Maximum recurrent peak reverse voltage V RRM V Maximum RMS voltage V RMS V Maximum DC blocking voltage V DC V Maximum average forword rectified current T A =75℃ Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at 1.0A V F V Maximum DC reverse current @T A =25℃ at rated DC blockjing voltage @T A =125℃ Typical junction capacitance (NOTE 1) C j pF Typical thermal resistance (NOTE 2) R jθL ℃/W Typical thermal resistance (NOTE 3) R jθA ℃/W Operating temperature range T j Storage temperature range T STG 2. Thermal resistance junction to lead, 6.0 mm coppeer pads to each terminal. 3. Thermal resistance junction to ambient, 6.0 mm coppeer pads to each terminal. REVERSE VOLTAGE:1300-2000V I FSM 1.1 SMSMSM - 55 --- + 175 A CURRENT: 1.0 A DO - 213AB 910 1120 1260 1400 1300 1600 1800 2000 SURFACE MOUNT RECTIFIERS μA SM513 --- SM2000 UNITSSM 1300 1600 1800 2000 5.0 NOTES:1. Measured at 1.0MHz and applied average voltage of 4.0V DC. A I R - 55 --- + 175 I (AV) 1.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD PEAK FORWARD SURGE CURRENT, (A) NUMBER OF CYCLES AT 60Hz SURGE CURRENT 12 4 6 8 10 20 40 60 80 100 8.3ms Single Half Sine-Wave (JEDED Method) FIG. 1 - TYPICAL FORWARD CURRENT AVERAGE FORWARD CURRENT, (A) AMBIENT TEMPERATURE, ( ) DERATING CURVE 1.0 0 25 50 75 100 125 150 175 Single Phase Half Wave 60Hz Resistive or Inductive Load FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE, (V) Pulse Width = 300us 1% Duty Cycle 1.0 .01 T J = 25 TJ = 100 TJ = 25 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0 20 40 60 80 100 120 140 .01 .04 1.0 JUNCTION CAPACITANCE, (pF) FIG. 5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, ( V ) 200 100 .1 .2 .4 1.0 2 4 10 20 40 100 TJ = 25 www.diode.kr Diode Semiconductor Korea