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Document overview
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Technical content
Features
Stand-off voltage: 2.8V Max. Transient protection for each line according to IEC61000-4-2 (ESD): ±27kV (contact discharge) IEC61000-4-5 (surge): 30A (8/20μs). Low capacitance: C J = 3pF typ. Ultra-low leakage current: I R < 1nA typ. Low clamping voltage. Solid-state silicon technology
Applications
10/100 Ethernet STB Router Networking Modem http//:www.sh-willsemi.com SOP-8P (Bottom View) Circuit diagram C2 SLVU2.8-4 = Device code Marking (Top View) Order information Device Package Shipping SLVU2.8-4 SOP-8P 4000/Tape&Reel 1 2 3 4 568 7 SLVU2.8 line 1 line 2 line 3 line 4 line 1 line 2 line 3 line 4
SLVU2.8-4 Will Semiconductor Ltd. 2 Revision 1.2, 2018/07/23 Absolute maximum ratings Electrical characteristics (TA = 25 oC, unless otherwise noted) Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) P pk 480 W Peak pulse current (tp = 8/20μs) I PP 30 A ESD according to IEC61000-4-2 air discharge VESD ±27 kV ESD according to IEC61000-4-2 contact discharge ±27 Junction temperature T J 125 oC Operating temperature T OP -40~85 oC Lead temperature T L 260 oC Storage temperature T STG -55~150 oC Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage V RWM 2.8 V Reverse leakage current I R V RWM = 2.8V <1 100 nA Reverse breakdown voltage V BR I T = 1mA 3 3.7 4.4 V Clamping voltage 1) V CL IPP = 1A, t p = 8/20μs 5 V IPP = 5A, t p = 8/20μs 8 V IPP = 30A, tp = 8/20μs 16 V Junction capacitance C J VR = 0V, f = 1MHz I/O to GND (Each Line) 3 5 pF
SLVU2.8-4 Will Semiconductor Ltd. 3 Revision 1.2, 2018/07/23 Typical characteristics (TA = 25oC, unless otherwise noted) 8/20μs waveform per IEC61000-4-5 Clamping voltage vs. Peak pulse current Non-repetitive peak pulse power vs. Pulse time Contact discharge current waveform per IEC61000-4-2 Capacitance vs. Reverse voltage Power derating vs. Ambient temperature 0123 3.0 3.2 3.4 3.6 3.8 4.0 f = 1MHz VAC = 50mV CJ - Junction capacitance (pF) VR - Reverse voltage (V) 1 10 100 1000 0.01 0.1 Peak pulse power (KW) Pulse time ( s) 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 % of Rated power TA - Ambient temperature ( o 0 5 10 15 20 25 30 Pulse waveform: tp = 8/20s VC - Clamping voltage (V) IPP - Peak pulse current (A) t60ns30ns tr = 0.7~1ns 100 Current (%) Time (ns) 100 Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s Peak pulse current (%) Time (s) T
SLVU2.8-4 Will Semiconductor Ltd. 4 Revision 1.2, 2018/07/23 ESD clamping (+8kV contact discharge per IEC61000-4-2) Applications Information The SLVU2.8-4 is designed to protect sensitive components from damage and latch-up which may result from such transient events. The SLVU2.8-4 can be configured to protect two high-speed line pairs. The device is connected as follows: The first line pair enters at pins 1 and 2 and exit at pins 8 and 7 respectively. The second line pair enters at pins 3 and 4 and exits at pins 6 and 5. The traces must be connected at the bottom of the device as shown. 1 2 3 4 568 7 line 1 line 2 line 3 line 4 line 1 line 2 line 3 line 4
SLVU2.8-4 Will Semiconductor Ltd. 5 Revision 1.2, 2018/07/23 Package outline dimensions SO-8 Symbol Dimensions in millimeters Dimensions in Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.700 5.100 0.185 0.201 e 1.270 (BSC) 0.050 (BSC) E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 L 0.400 1.270 0.016 0.050 θ 0o 8 o 0 o 8 o