SLVU2.8-4 WPMTEK | Alldatasheet
Document overview
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Technical content
Features
–IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV –IEC61000-4-5 (Lightning) 30A (8/20µs) RoHS Compliant Dimensions& Symbol（Unit:mm Max） Circuit Diagram & Pin Schematic Mechanical Characteristics Package: SO-8 LeadFinish: MatteTin Case Material: “Green”Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below MarkingInformation: See Below
Applications
Base Station AnalogInputs SwitchSystems WAN/LAN Equipment Desktops, Servers, and Notebooks Low Voltage Interfaces Markinginformation Dot denotes Pin1 Details markingcode referencecustomer approval list OrderingInformation Part Number Packaging Reel Size SLVU2.8-4 2500/Tape& Reel 7 inch 600W peak pulse power (8/20us) Working voltage: 2.8V Protects two line pairs (four lines) Ultra low leakage: nA level Low clamping voltage Very Low capacitance: 2pF Complies with following standards: The SLVU2.8-4 is designed to protect low voltage, CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. Low capacitance compensation diode is integrated into the TVS to lower the typical capacitance to 2 pF per line. The SLVU2.8-4 complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. The SLVU2.8-4 is assembled into a 8-pin lead-free SO-8 package, The combination of low leakage, signal integrity and flow through design makes the SLVU2.8-4 an ideal application such as 10/100/1000 Ethernet. Ver1.51 - 1 - www.wpmtek.com
AbsoluteMaximumRatings (TA=25°C unlessotherwisespecified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 600 W Peak Pulse Current(8/20µs) Ipp 30 A ESD per IEC 61000−4−2(Air) ESD per IEC 61000−4−2(Contact) VESD ±30 ±30 kV OperatingTemperatureRange TJ −55to +125 °C StorageTemperatureRange Tstg −55to +150 °C Electrical Characteristics(TA=25°C unlessotherwisespecified) Parameter Symbol Min Typ Max Unit Test Condition ReverseWorking Voltage VRWM 2.8 V Punch-ThroughVoltage VBT 3.0 V IT= 2uA Snap-BackVoltage VSB 3.0 V ISB =50mA ReverseLeakage Current IR µA VRWM= 2.8V Clamping Voltage VC 8.5 V IPP = 5A (8 x 20µs pulse) Clamping Voltage VC 18 V IPP = 25A (8 x 20µs pulse) Clamping Voltage VC 20 V IPP = 30A (8 x 20µs pulse) JunctionCapacitance CJ 2 pF VR =0V, f = 1MHz SLVU2.8-4
2.8 V TVS Array For ESD and Lathc-Up Protection
Ver1.51 - 2 - www.wpmtek.com
Typical PerformanceCharacteristics(TA=25°C unlessotherwiseSpecified) Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve
8 X 20μs Pulse Waveform ESD Clamping Voltage
8 kV Contact per IEC61000−4−2 Note：Data is taken with a 10x attenuator 100 0 20 40 60 80 % of Peak Pulse Current Time_t(μs) Junction Capacitance vs. Reverse Voltage 0 25 30 )Clamping Voltage _Vc(V 5 10 15 20 Peak Pulse Current_Ipp (A) SLVU2.8-4 Ver1.51 - 3 - www.wpmtek.com
ReflowCondition Pb-Freeassembly (seeFIG.2) PreHeat -TemperatureMin(Ts(min)) +150℃ -TemperatureMax(Ts(max)) +200℃ -Time(MintoMax)(ts) 60-180secs. Averagerampuprate(LiquidusTemp(TL)topeak) 3℃/sec.Max Ts(max) toTL -Ramp-upRate 3℃/sec.Max Reflow -Temperature(TL)(Liquidus) +217℃ -Temperature(tL) 60-150secs. PeakTemp(Tp) +260(+0/-5)℃ Timewithin5℃ ofactualPeakTemp(tp) 30secs.Max Ramp-downRate 6℃/sec.Max Time25℃ toPeakTemp(TP) 8min.Max Donotexceed +260℃ SLVU2.8-4 Ver1.51 - 4 - www.wpmtek.com
SLVU2.8-4 Ver1.51 - 5 - www.wpmtek.com WPMtek reserves the right to make changes to the product specification and data in this document without notice. WPMtek makes no warranty, representation or guarantee regarding the suitability of its products for any particu lar purpose, nor does WPMtek assume any liability arising from the application or use of any products or circuits, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Any enquiry ,please write to sales@wpmtek.com for futher information.