SLIMDIP-L MITSUBISHI | Alldatasheet
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Publication Date : January 2019 < DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE Normal terminal type MAIN FUNCTION AND RATINGS RC-IGBT inverter bridge for three phase DC-to-AC power conversion Built-in bootstrap diodes with current limiting resistor Open emitter type APPLICATION AC 100~240V (DC voltage:400V or below) three phase low power motor inverter drive TERMINAL LINE UP Terminal Part number Suffix Normal terminal SLIMDIP-L 500 Short terminal SLIMDIP-L 505 INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
- For P-side : Drive circuit, High voltage high-speed level sh ifting, Control supply under-voltage protection (UV)
- For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT)
- Fault signaling : Corresponding to SC fault (N-s ide IGBT), UV fault (N-side supply) and OT fault
- Temperature monitoring : Outputting LVIC temperature by analog signal
- Input interface : Schmitt-triggered 3V, 5V input compatible, high active logic.
- UL Recognized : UL1557 File E323585 INTERNAL CIRCUIT Bootstrap Diode with current limiting resistor RC-IGBT VUFB(3) VVFB(5) VWFB(7) W(24) VP(9) WP(10) UP(8) VP1(11) VNC(12) UN(13) VN(14) WN(15) FO(17) VN1(16) VNC(19) NW(21) CIN(18) NU(23) NV(22) V(25) U(26) P(27) VOT(20) VUFS(2) VVFS(4) VWFS(6) RC-IGBT1 RC-IGBT2 RC-IGBT3 RC-IGBT4 RC-IGBT5 RC-IGBT6 LVIC HVIC
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit VCC Supply voltage Applied between P-NU,NV,NW 450 V VCC(surge) Supply voltage (surge) Applied between P-NU,NV,NW 500 V VCES Collector-emitter voltage 600 V ±IC Each IGBT collector current T C= 25°C (Note 1) 15 A ±ICP Each IGBT collector current (peak) T C= 25°C, less than 1ms 30 A Tj Junction temperature (Note 2) -30~+150 °C Note1: Pulse width and period are limited due to junction temperature. CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit VD Control supply voltage Applied between V P1-VNC, VN1-VNC 20 V VDB Control supply voltage Applied between V UFB-VUFS, VVFB-VVFS,VWFB-VWFS 20 V VIN Input voltage Applied between U P, VP, WP, UN, VN, WN-VNC -0.5~V D+0.5 V VFO Fault output supply voltage Applied between F O-VNC -0.5~V D+0.5 V IFO Fault output current Sink current at F O terminal 1 mA VSC Current sensing input voltage Applied between CIN-V NC -0.5~V D+0.5 V TOTAL SYSTEM Symbol Parameter Condition Ratings Unit VCC(PROT) Self protection supply voltage limit (Short circuit protection capability) VD = 13.5~16.5V, Inverter Part Tj = 125°C, non-repetitive, less than 2μs 400 V TC Module case operation temperature Measurement point of Tc is described in Fig.1 (Note2) -30~+115 °C Tstg Storage temperature -40~+125 °C Viso Isolation voltage 60Hz, Sinusoidal, AC 1min, between connected all pins and heat sink plate 2000 V rms Note2 TC MEASUREMENT POINT Fig. 1 THERMAL RESISTANCE Symbol Parameter Condition Limits Unit Min. Typ. Max. Rth(j-c)Q Junction to case thermal resistance (Note 3) Inverter RC-IGBT part (per 1/6 module) - - 4.0 K/W Note 3: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100 μm~+200μm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.4K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•K). Tc point Heat sink RC-IGBT chip position Power terminals Control terminals 9.6mm
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Limits Unit Min. Typ. Max. VCE(sat) Collector-emitter saturation voltage VD=VDB = 15V, VIN= 5V IC= 15A, Tj= 25°C - 1.60 1.95 V IC= 15A, Tj= 125°C - 1.80 2.15 VEC FWDi forward voltage V IN= 0V, -IC= 15A - 1.40 1.90 V ton Switching times VCC= 300V, VD= VDB= 15V IC= 15A, Tj= 125°C, VIN= 0↔5V Inductive Load (upper-lower arm) 0.65 1.05 1.45 μs tC(on) - 0.40 0.65 μs toff - 1.15 1.60 μs tC(off) - 0.15 0.30 μs trr - 0.30 - μs ICES Collector-emitter cut-off current VCE=VCES Tj= 25°C - - 1 mA Tj= 125°C - - 10 CONTROL (PROTECTION) PART Symbol Parameter Condition Limits Unit Min. Typ. Max. ID Circuit current Total of VP1-VNC, VN1-VNC VD=15V, VIN=0V - - 3.10 mA VD=15V, VIN=3.3V - - 4.20 VD=15V, VIN=5V - - 3.10 IDB Each part of VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VD=VDB=15V, VIN=0V - - 0.10 VD=VDB=15V, VIN=5V - - 0.10 VSC(ref) Short circuit trip level V D = 15V (Note 4) 0.455 0.480 0.505 V UVDBt P-side Control supply under-voltage protection(UV) Tj ≤125°C Trip level 7.0 10.0 12.0 V UVDBr Reset level 7.0 10.0 12.0 V UVDt N-side Control supply under-voltage protection(UV) Trip level 10.3 - 12.5 V UVDr Reset level 10.8 - 13.0 V VOT Temperature Output Pull down R=5.1k Ω (Note 5) LVIC Temperature=95C 2.76 2.89 3.03 V LVIC Temperature=25C 0.86 1.16 1.39 V OTt Over temperature protection (Note6) VD = 15V Trip level 115 130 145 °C OTrh Detect LVIC temperature Hysteresis of trip-reset - 10 - °C VFOH Fault output voltage VSC = 0V, FO terminal pulled up to 5V by 10kΩ 4.9 - - V VFOL V SC = 1V, IFO = 1mA - - 0.95 V tFO Fault output pulse width (Note 7) 20 - - μs IIN Input current V IN = 5V 0.70 1.00 1.50 mA Vth(on) ON threshold voltage Applied between UP, VP, WP, UN, VN, WN-VNC - 1.70 2.35 V Vth(off) OFF threshold voltage 0.70 1.30 - Vth(hys) ON/OFF threshold hysteresis voltage 0.25 0.40 - VF Bootstrap Di forward voltage IF=10mA including voltage drop by limiting resistor (Note 8) 1.1 1.7 2.3 V R Built-in limiting resistance Included in bootstrap Di 80 100 120 Ω Note 4 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating. 5 : Temperature of LVIC vs. VOT output characteristics is described in Fig.3. 6 : When the LVIC temperature exceeds OT trip temperature level(OT t), OT protection works and Fo outputs. In t hat case if the heat sink dropped off or fixed loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150C). 7 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC fa ilure, Fo pulse width is a fixed width (=minimum 20μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.) 8 : The characteristics of bootstrap Di is described in Fig.2. Fig. 2 Characteristics of Bootstrap Di VF-IF curve (@Ta=25C) Including Voltage Drop by Limiting Resistor (Right chart is enlarged chart.)
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 Fig. 3 Temperature of LVIC vs. VOT Output Characteristics Fig. 4 Pattern Wiring Around the Analog Voltage Output Circuit [VOT terminal] (1) VOT outputs the analog signal that is amplified signal of temperature detecting element on LVIC by inverting amplifier. (2) It is recommended to insert 5k Ω (5.1k Ω is recommended) pull down resistor for getting linear output characteristics at low temperature below room temperature. When the pull down resistor is inserted between VOT and VNC(control GND), the extra circuit current, which is calculated approximately by VOT output voltage divided by pull down resistance, flows as LVIC circuit current continuously. In the case of using VOT for detecting high temperature over room temperature only, it is unnecessary to insert the pull down resistor. (3) In the case of using VOT with low voltage controller like 3.3V MCU, VOT output might exceed control supply voltage 3.3V when temperature rises excessively. If system uses low voltage controller, it is recommended to insert a clamp Di betw een control supply of the controller and V OT output for preventing over voltage destruction. (4) In the case of not using VOT, leave VOT output NC (No Connection). Refer the application note for SLIMDIP series about the usage of VOT. 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 60 70 80 90 100 110 120 130 VOT Output [V] LVIC Te mpe r atur e [℃] 3.03 2.89 2.76 max typ min Ref VOT Temperature signal VNC Inside LVIC of DIPIPM MCU 5.1kΩ
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 MECHANICAL CHARACTERISTICS AND RATINGS Parameter Condition Limits Unit Min. Typ. Max. Mounting torque Mounting screw : M3 (Note 9) Recommended 0.69N·m 0.59 0.69 0.78 N·m Terminal pulling strength Control terminal: Load 5N Power terminal: Load 10N JEITA-ED-4701 10 - - s Terminal bending strength Control terminal: Load 2.5N Power terminal: Load 5N 90deg. bend JEITA-ED-4701 2 - - times Weight - 5.5 - g Heat radiation part flatness (Note 10) -30 - 80 μm Note 9: Plain washers (ISO 7089~7094) are recommended. Note 10: Measurement positions of heat radiation part flatness are as below RECOMMENDED OPERATION CONDITIONS Symbol Parameter Condition Limits Unit Min. Typ. Max. VCC Supply voltage Applied between P-NU, NV, NW 0 300 400 V VD Control supply voltage Applied between V P1-VNC, VN1-VNC 13.5 15.0 16.5 V VDB Control supply voltage Applied between V UFB-VUFS, VVFB-VVFS,VWFB-VWFS 13.0 15.0 18.5 V ∆VD, ∆VDB Control supply variation -1 - +1 V/ μs tdead Arm shoot-through blocking time For each input signal, TC100C 1.0 - - μs fPWM PWM input frequency T C ≤ 100°C, Tj ≤ 125°C - - 20 kHz IO Allowable r.m.s. current VCC = 300V, VD=VDB=15V, P.F = 0.8, Sinusoidal PWM T C ≤ 100°C, Tj ≤ 125°C (Note11) fPWM= 5kHz - - 7.0 Arms fPWM= 15kHz - - 4.0 PWIN(on) Minimum input pulse width (Note 12) 0.7 - - μs PWIN(off) 0.7 - - VNC V NC variation Between V NC-NU, NV, NW (including surge) -5.0 - +5.0 V Tj Junction temperature -20 - +125 °C Note 11: Allowable r.m.s. current depends on the actual application conditions. 12: DIPIPM might not make response if the input signal pulse width is less than PWIN(on), PWIN(off). Heat sink side Heat sink side Measurement position 14.9mm 0.5mm ＋ －
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 Fig. 5 Timing Charts of The DIPIPM Protective Functions [A] Short-Circuit Protection (N-side only with the external shunt resistor and RC filter) a1. Normal operation: IGBT ON and outputs current. a2. Short circuit current detection (SC trigger) (It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC.) a3. All N-side IGBT's gates are hard interrupted. a4. All N-side IGBTs turn OFF. a5. F O outputs for tFo=minimum 20μs. a6. Input = “L”: IGBT OFF a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) a8. Normal operation: IGBT ON and outputs current. [B] Under-Voltage Protection (N-side, UV b1. Control supply voltage V D exceeds under voltage reset level (UVDr), but IGBT turns ON by next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) b2. Normal operation: IGBT ON and outputs current. b3. VD level drops to under voltage trip level. (UVDt). b4. All N-side IGBTs turn OFF in spite of control input condition. b5. Fo outputs for tFo=minimum 20μs, but output is extended during VD keeps below UVDr. b6. VD level reaches UVDr. b7. Normal operation: IGBT ON and outputs current. Lower-side control input Protection circuit state Internal IGBT gate Output current Ic Sense voltage of the shunt resistor Error output Fo SC trip current level SET RESET SC reference voltage Delay by RC filtering UVDr RESET SET RESET UVDt b1 Control input Protection circuit state Control supply voltage VD Output current Ic Error output Fo
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 [C] Under-Voltage Protection (P-side, UVDB) c1. Control supply voltage VDB rises. After the voltage reaches under voltage reset level UVDBr, IGBT turns on by next ON signal (LH). c2. Normal operation: IGBT ON and outputs current. c3. VDB level drops to under voltage trip level (UVDBt). c4. IGBT of the corresponding phase only turns OFF in spite of control input signal level, but there is no FO signal output. c5. VDB level reaches UVDBr. c6. Normal operation: IGBT ON and outputs current. [D] Over Temperature Protection (N-side, Detecting LVIC temperature) d1. Normal operation: IGBT ON and outputs current. d2. LVIC temperature exceeds over temperature trip level(OTt). d3. All N-side IGBTs turn OFF in spite of control input condition. d4. Fo outputs for tFo=minimum 20μs, but output is extended during LVIC temperature keeps over OTt. d5. LVIC temperature drops to over temperature reset level. d6. Normal operation: IGBT turns on by next ON signal (LH). (IGBT of each phase can return to normal state by inputting ON signal to each phase.) SET RESET OTt OTt - OTrh Control input Protection circuit state Temperature of LVIC Output current Ic Error output Fo Control input Protection circuit state Control supply voltage VDB Output current Ic Error output Fo UVDBr RESET SET RESET UVDBt Keep High-level (no fault output)
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 Fig. 6 Example of Application Circuit (1) If control GND is connected with power GND by common broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point N1 (near the terminal of shunt resistor). (2) It is recommended to insert a Zener diode D1(24V/1W) between each pair of control supply terminals to prevent surge destruction. (3) To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22μF snubber capacitor C3 between the P-N1 terminals is recommended. (4) R1, C4 of RC filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp-compensated type. The time constant R1C4 should be set so that SC current is shut down within 2 μs. (1.5μs~2μs is general value.) SC interrupting time might vary with the wiring pattern, so the enough evaluation on the real system is necessary. (5) To prevent malfunction, the wiring of A, B, C should be as short as possible. (6) The point D at which the wiring to CIN fil ter is divided should be near the terminal of shunt resistor. NU, NV, NW terminals sh ould be connected at near NU, NV, NW terminals. (7) All capacitors should be mounted as close to the terminals as possible. (C1: good temperature, frequency characteristic electrolytic type and C2:0.01μ-2μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.) (8) Input drive is High-active ty pe. There is a minimum 3.3k Ω pull-down resistor in the input circui t of IC. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on an d turn-off threshold voltage. (9) Thanks to built-in HVIC, direct coupling to MCU without any optocoupler or transformer isolation is possible. (10) Fo output is open drain type. It should be pulled up to MCU or control power supply (e.g. 5V,15V) by a resistor that makes IFo up to 1mA. (IFO is estimated roughly by the formula of c ontrol power supply voltage divided by pull- up resistance. In the case of pulled up to 5V, 10kΩ (5kΩ or more) is recommended.) (11) Two VNC terminals are connected inside DIPIPM, please connect either one to the 15V power supply GN D outside and leave another one open. (12) If high frequency noise superimposed to the control supply line, IC ma lfunction might happen and caus e DIPIPM erroneous operati on. To avoid such problem, line ripple voltage should meet dV/dt ≤+/-1V/μs, Vripple≤2Vp-p. Long GND wiring might generate noise to input signal and cause IGBT malfunction Long wiring might cause SC level fluctuation and malfunction A D1C1 C2 D1C1 C2 D1C1 C2 15V VD M C4 R1 Shunt resistor B C VUFS(2) VVFB(5) VWFB(7) UN(13) VN(14) WN(15) Fo(17) VN1(16) VNC(19) P(27) U(26) W(24) LVIC V(25) VP(9) WP(10) UP(8) VP1(11) RC-IGBT D VNC(12) HVIC NW(21) NU(23) NV(22) + VUFB(3) VVFS(4) VWFS(6) CIN(18) VOT(20) 5.1kΩ RC-IGBT Power GND wiring Control GND wiring Long wiring might cause short circuit failure In the case of being affected by noise, it is recommended to insert RC filter. MCU
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 Fig. 7 MCU I/O Interface Circuit Fig. 8 Pattern Wiring Around the Shunt Resistor Fig. 9 External SC Protection Circuit with Using Three Shunt Resistors (1) It is necessary to set the time constant RfCf of external comparator input so that IGBT stop within 2μs when short circuit occurs. SC interrupting time might vary with the wiring pattern, comparator speed and so on. (2) The threshold voltage Vref should be set up the same rating of short circuit trip level (Vsc(ref) typ. 0.48V). (3) Select the external shunt resistance so that SC trip-level is less than specified maximum value. (4) To avoid malfunction, the wiring A, B, C should be as short as possible. (5) The point D at which the wiring to comparator is divided should be near the terminal of shunt resistor. (6) OR output high level should be over 0.505V (=maximum Vsc(ref)). (7) GND of Comparator, Vref circuit and Cf should be not connected to noisy power GND but to control GND wiring. Note: The RC coupling (parts shown in the dotted line) at each input depends on user’s PWM control strategy and the wiring impedance of the printed circuit board. The DIPIPM signal input section integrates a 3.3kΩ(min) pull-down resistor. Therefore, when using an external filtering resis tor, please pay attention to the signal voltage drop at input terminal. UP,VP,WP,UN,VN,WN Fo VNC(Logic) DIPIPM MCU 10kΩ 5V line 3.3kΩ(min) P V U W N-side P-side Drive circuit DIPIPM VNC NW Drive circuit CIN NV NU Vref + Vref Vref Comparator (Open collector output type) External protection circuit Protection circuit Shunt resistors Rf Cf 5V B A C OR output D Wiring Inductance should be less than 10nH. Inductance of a copper pattern with length=17mm, width=3mm is about 10nH. NU, NV, NW should be connected each other at near terminals. VNC NU NV NW DIPIPM VNC GND wiring from V NC should be connected close to the terminal of shunt resistor. Shunt resistor DIPIPM NU NV NW Low inductance shunt resistor like surface mounted (SMD) type is recommended. GND wiring from V NC should be connected close to the terminal of shunt resistor. Shunt resistors Each wiring Inductance should be less than 10nH. Inductance of a copper pattern with length=17mm, width=3mm is about 10nH.
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 Fig. 10 Package Outlines [Dimension: mm] [ SLIMDIP-L Suffix:500 : Normal Terminal Type ] [ SLIMDIP-L Suffix:505 : Short Terminal Type ] Note: Connect only one VNC terminal (No.12 or 19) to the system GND and leave another one open.
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 Revision Record Rev. Date Page Revised contents 1 19/04/2016 - New 2 03/04/2017 10 Revise detail B part of package outline 3 05/04/2018 1 Short terminal type is added to terminal line up.
5 JEITA-ED-4701 was EIAJ-ED-4701
10 Add ‘Short terminal type’
4 22/01/2019 1 Outline note was ‘Long terminal type’.
< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : January 2019 © 2019 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. SLIMDIP, DIPIPM and CSTBT are trademarks of MITSUBISHI ELECTRIC CORPORATION. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials
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